Double-sided extended drain field effect transistor, and integrated overvoltage and reverse voltage protection circuit that uses the same
View Patent ↗An integrated overvoltage and reverse voltage protection circuit that includes two p-channel double-sided extended drain transistors coupled to a high voltage source, each having their n-well coupled through a resistor to the high voltage source. For voltage regulation, a voltage divider is coupled in series with a first of these transistors, while the drain of the second transistor is coupled to the gate of the first transistor. For voltage blocking, the voltage divider may span the entire supply voltage. An n-channel transistor couples the second p-channel transistor to a low voltage source. A middle node in the voltage divider is coupled to one input of a comparator, with a reference voltage coupled to the second input. The comparator output drives the gate terminal of the n-channel transistor. A load to be protected may be disposed in parallel with the voltage divider.
1. An integrated voltage regulator and reverse voltage protection circuit comprising the following:
a first double-sided extended drain field effect transistor of a first carrier type and having a source terminal coupled to a first voltage source;
a second double-sided extended drain field effect transistor of the first carrier type and also having a source terminal couple to the fast voltage source, and having a drain terminal coupled to a gate terminal of the first double-sided extended drain field effect transistor of the first carrier type;
a first resistor that is coupled between the first supply voltage and a body terminal of the first double-sided extended drain field effect transistor of the first carrier type and a body terminal of the second double-sided extended drain field effect transistor of the first carrier type;
a second resistor;
a third resistor coupled with the second resistor in series between a drain terminal of the first double-sided extended drain field effect transistor of the first carrier type and a second voltage source;
an extended drain field effect transistor of a second carrier type opposite the first carrier type, having a drain terminal coupled to the drain terminal of the second double-sided extended drain field effect transistor, and having a source terminal coupled to the second voltage source; and
an amplifier having an output terminal coupled to a gate terminal of the extended drain field effect transistor of the second carrier type.
2. A circuit in accordance with claim 1 , wherein the extended drain field effect transistor of the second carrier type is a single-sided extended drain field effect transistor of the second carrier type.
3. A circuit in accordance with claim 1 , wherein the extended drain field effect transistor of the second carrier type is a double-sided extended drain field effect transistor of the second carrier type.
4. A circuit in accordance with claim 1 , wherein the first carrier type is n-channel, and wherein the second carrier type is p-channel.
5. A circuit in accordance with claim 1 , wherein the first carrier type is p-channel, and wherein the second carrier type is n-channel.
6. A circuit in accordance with claim 1 , wherein the circuit further comprises a load circuit coupled between the drain terminal of the first double-sided extended drain field effect transistor and the second voltage source.
7. A circuit in accordance with claim 6 , wherein the circuit is integrated on a single chip.
8. A circuit in accordance with claim 1 , wherein a node between the second and third resistors is couple to a first input terminal of the amplifier.
9. A circuit in accordance with claim 1 , wherein a second input terminal of the amplifier is configured to be connected to a reference voltage.
10. A circuit in accordance with claim 9 , wherein the reference voltage is a first reference voltage, wherein a gate terminal of the second double-side extended drain field effect transistor of the first carrier type is configured to be coupled to a second voltage.
11. A circuit in accordance with claim 10 , wherein the second voltage reference is different that the first voltage source by a factor equal to the absolute value of a threshold voltage of the second double-sided extended drain field effect transistor of the first carrier type.
12. A circuit in accordance with claim 1 , wherein the first double-sided extended drain field effect transistor of the first carrier type comprises the following:
a substrate; and
a gate terminal overlying the substrate over a channel region in the substrate, wherein the substrate further comprises the following:
a drain region of the first carrier type, wherein the drain region is laterally separated from the channel region by a first RESURF region of the first carrier type; and
a source region of the first carrier type, wherein the source region is laterally separated from the channel region by a second RESURF region of the first carrier type.
13. A circuit in accordance with claim 12 , wherein the substrate further comprises the following:
a third RESURF region of the first carrier type disposed laterally bordering the drain region on a side that is remote front the channel region; and
a fourth RESURF region of the first carrier type disposed laterally bordering the source region on a side that is remote from the channel region.
14. A circuit in accordance with claim 1 , wherein the first double-sided extended drain field effect transistor of the first carrier type is a first extended drain field effect transistor of the first carrier type, and the second double-sided extended drain field effect transistor of the first carrier type is a second extended drain field effect transistor of the first carrier type, the circuit further comprising the following:
a third extended drain field effect transistor of the first carrier type having a drain terminal coupled to the drain terminal of the extended drain field effect transistor of the second carrier type, and having a source terminal coupled to the drain terminal of the second extended drain field effect transistor of the first carrier type and to the gate terminal of the first extended drain field effect transistor of the first carrier type.
15. An integrated over voltage and reverse voltage protection circuit comprising the following:
a first double-sided extended drain field effect transistor of a first carrier type and having a source terminal coupled to a first voltage source;
a second double-sided extended drain field effect transistor of the first carrier type and also having a source terminal couple to the first voltage source and having a drain terminal coupled to a gate terminal of the first double-sided extended drain field effect transistor of the first carrier type;
a first resistor that is coupled between the first supply voltage and a body terminal of the first double-sided extended drain field effect transistor of the first carrier type and a body terminal of the second double-sided extended drain field effect transistor of the first carrier type;
a second resistor;
a third resistor coupled with the second resistor in series between the first voltage source and a second voltage source;
an extended drain field effect transistor of a second carrier type opposite the first carrier type, having a drain terminal coupled to the drain terminal of the second double-sided extended drain field effect transistor, and having a source terminal coupled to the second voltage source; and
a comparator having an output terminal coupled to a gate terminal of the extended drain field effect transistor of the second carrier type.
16. A circuit in accordance with claim 15 , wherein a node between the second and third resistors is couple to a first input terminal of the comparator.
17. A circuit in accordance with claim 16 , wherein a second input terminal of the comparator is configured to be connected to a reference voltage.
18. A circuit in accordance with claim 17 , wherein the reference voltage is a first reference voltage, wherein a gate terminal of the second double-sided extended drain field effect transistor of the first carrier type is configured to be coupled to a second voltage reference.
19. A circuit in accordance with claim 18 , wherein the second voltage reference is different that the first voltage source by a factor equal to the absolute value of a threshold voltage of the second double-sided extended drain field effect transistor of the first carrier type.
20. A circuit in accordance with claim 15 , wherein the first double-sided extended drain field effect transistor of the first carrier type is a first extended drain field effect transistor of the first carrier type and the second double-sided extended drain field effect transistor of the first carrier type is a second extended drain field effect transistor of the first carrier type, the circuit further comprising the following:
a third extended drain field effect transistor of the first carrier type having a drain terminal coupled to the drain terminal of the extended drain field effect transistor of the second carrier type, and having a source terminal coupled to the drain terminal of the second extended drain field effect transistor of the first carrier type and to the gate terminal of the first extended drain field effect transistor of the first carrier type.