Method for making contact with a doping region of a semiconductor component
View Patent ↗A method makes contact with a doping region formed at a substrate surface of a substrate. An insulating layer is applied on the substrate surface and a contact hole is formed in the insulating layer. A metal-containing layer is subsequently deposited on the insulating layer and the surface region of the doping region that is uncovered by the contact hole. In a subsequent thermal process having two steps, first the metal-containing layer is reacted with the silicon of the doping region to form a metal silicide layer and then the rest of the metal-containing layer is converted into a metal-nitride-containing layer in a second thermal step.
1. A method for making and contacting a doping region of a semiconductor component, which comprises the steps of:
providing a silicon substrate having a substrate surface;
introducing a dopant into the silicon substrate resulting in the doping region being formed at the substrate surface in the substrate;
depositing and patterning an insulating layer on the substrate surface, a surface region of the doping region being uncovered;
depositing a metal-containing layer on the insulating layer and the surface region;
processing the substrate during a first step in a process chamber at a first temperature in a first atmosphere containing H 2 , for a first time duration, resulting in metal silicide being produced from a part of the metal-containing layer and a part of the doping region; and
subsequently processing the substrate during a second step at a second temperature in a second atmosphere containing less than 10% H 2 and more than 90% N 2 , for a second time duration to convert a remaining part of the metal-containing layer into metal nitride.
2. The method according to claim 1 , which further comprises setting the first time duration to be shorter than the second time duration.
3. The method according to claim 1 , which further comprises forming the metal-containing layer from a material selected from the group consisting of titanium, tantalum, cobalt, molybdenum, palladium, platinum, nickel and tungsten.
4. The method according to claim 1 , which further comprises using an ionized metal plasma method at a temperature between 180° C. and 220° C. for depositing the metal-containing layer.
5. The method according to claim 1 , which further comprises using a wet-chemical cleaning process for cleaning the uncovered surface region.
6. The method according to claim 1 , which further comprises using an ionized metal plasma method at a temperature of 200° C.±5° C. for depositing the metal-containing layer.
7. The method according to claim 1 , which further comprises during the first step, carrying out the processing of the substrate at a temperature of 550° C.
8. The method according to claim 1 , which further comprises during the first step, forming the first atmosphere to contain N 2 with a proportion of less than 25%.
9. The method according to claim 1 , which further comprises during the second step, forming the second atmosphere to contain a proportion of 4% H 2 and a proportion of 96% N 2 .
10. The method according to claim 9 , which further comprises during the second step, carrying out the processing of the substrate at the second temperature being S50° C.