Formation of a contact in a device, and the device including the contact
View Patent ↗A method of forming a contact to an underlayer of a device includes the steps of forming a contact hole, forming a contact hole barrier layer of a barrier material in the contact hole of the device, etching the contact hole barrier layer on the bottom surface of the contact hole, depositing a liner material in the contact hole, and filling the contact hole with a conductive material. A device such as a semiconductor, passive device, capacitor or FeRAM is formed in accordance with the method. The portions of the contact hole barrier layer on the side walls of the contact hole inhibit lateral diffusion of hydrogen and/or oxygen. The contact hole barrier layer can be performed after a wet etch process to fill voids in an existing barrier layer caused by that process, or prior to the wet etch process to prevent damage to the existing barrier layer.
1. A method of forming a contact to an underlayer or region of a device comprising:
forming a contact hole through a portion of the device including through a first barrier layer, the contact hole having sides which extend above and below the first barrier layer and having a bottom surface;
wet etching the contact hole;
forming a contact hole barrier layer of a barrier material in the contact hole, after wet etching the contact hole, thereby filling voids in the first barrier layer caused by the wet etching, the contact hole barrier layer being continuous between the sides and bottom surface of the contact hole;
etching the contact hole barrier layer on the bottom surface of the contact hole;
depositing a liner material in the contact hole to form a contact liner to promote subsequent filling of the contact hole; and
filling the contact hole with a conductive material.
2. A method according to claim 1 , in which the barrier material of the contact hole barrier layer is Al 2 O 3 or TiO 2 .
3. A method according to claim 1 , in which the barrier material of the contact hole barrier layer is deposited using an atomic layer deposition (ALD) method.
4. A method according to claim 1 , in which the device is a semiconductor device.
5. A method according to claim 1 , in which the device is a passive device.
6. A method according to claim 1 , in which the device is a capacitor.
7. A method according to claim 6 , in which the device is an FeRAM.