Low power charge pump
View Patent ↗A low power charge pump is disclosed. A pump driving node of a first pump stage is selectively coupled to a pump driving node of the subsequent pump stage. Subsequent to a transfer of charge from a first pump stage to a subsequent stage, the first and subsequent pump driving nodes are coupled. Residual charge on a first stage pump driving node is thereby transferred to a subsequent pump driving node. Subsequent to the transfer of charge from the first pump driving node to the second pump driving node, the nodes are uncoupled. By selectively coupling a first pump stage to a pump driving node of the subsequent pump stage, the first pump driving node may pre-charge the subsequent pump driving node, thereby reducing the energy that must be provided by clock driving circuitry to produce a positive-going transition of a driving clock. Advantageously, pre-charging energy is taken from the first stage, reducing the energy that was heretofore dissipated by clock driving circuitry during a negative-going clock signal transition. In this novel manner conversion efficiency of a charge pump device may be beneficially increased, providing enhanced low power performance.
1. A charge pump electronic circuit for boosting a low input voltage, wherein inputs of said charge pump electronic circuit comprise a first driving signal and a second driving signal, wherein said first and second driving signals are outputs of a first clock signal generation circuit, wherein inputs of said first clock signal generation circuit are a third clock signal and a fourth clock signal, said charge pump electronic circuit for boosting comprising:
a first threshold voltage cancellation pass gate device coupled with a low input voltage source providing the low input voltage;
a first pump node coupled with said first threshold voltage cancellation pass gate device and a first capacitive element;
a first pump driving node coupled with said first capacitive element for receiving said first driving signal;
a second pump node coupled with a second capacitive element;
a second pump driving node coupled with said second capacitive element for receiving said second driving signal, wherein said second driving signal is 180 degrees out of phase with said first driving signal;
a pump driving node pre-charge pass gate device for selectively coupling said first pump driving node to said second pump driving node, wherein when said first and second driving signals are in concurrent high impedance states, said pump driving node pre-charge pass gate device transfers charge from said first pump driving node to said second pump driving node;
a second threshold voltage cancellation pass gate device for coupling said first pump node with said second pump node;
a coupling between said first pump node and said second threshold voltage cancellation pass gate device;
a fifth signal coupled with said second threshold voltage cancellation pass gate device for increasing voltage at said second threshold voltage cancellation pass gate device above a voltage of said first pump node, wherein said fifth signal is a boosted version of said third clock signal; and
a sixth signal coupled with said first threshold voltage cancellation pass gate device for increasing voltage at said first threshold voltage cancellation pass gate device above a voltage of said low input voltage source, wherein said sixth signal is a boosted version of said fourth clock signal.
2. The charge pump electronic circuit as described in claim 1 wherein said low input voltage is equal to or less than about 1.8 volts.
3. The charge pump electronic circuit as described in claim 2 further comprising a third capacitive element for driving said second threshold voltage cancellation pass gate device, wherein said third capacitive element is coupled with said fifth signal, and a fourth capacitive element for driving said first threshold voltage cancellation pass gate device, wherein said fourth capacitive element is coupled with said sixth signal.
4. The charge pump electronic circuit as described in claim 3 , wherein said third and fourth capacitive elements require a voltage of at least 2.0 volts to turn on said second and first threshold voltage cancellation pass gate, respectively, and wherein said fifth and sixth signals are boosted to a voltage equal to or greater than about 2.0 volts.
5. The charge pump electronic circuit as described in claim 1 rendered in an integrated circuit.
6. The charge pump electronic circuit as described in claim 5 wherein said integrated circuit comprises non-volatile memory.
7. The charge pump electronic circuit as described in claim 6 wherein said non-volatile memory comprises a floating gate storage element.
8. The charge pump electronic circuit as described in claim 6 wherein said non-volatile memory comprises a nitride layer as a storage element.