Semiconductor device with exposed electrodes
View Patent ↗It is difficult to check the mounted state of solder by means of visual inspection after the mounting of a semiconductor device according to a conventional art, in particular, a CSP-semiconductor device, to a substrate and a problem arises wherein defective products increase and yield decreases. Terminals 50, 51, 52 and 53 for external connection are exposed from second main surface 412 of first insulating substrate 41 in the semiconductor device according to the present invention. Thus, second insulating substrate 48 is adhered to second main surface 412 so as to surround the internal portions of these terminals for external connection. Thereby, second insulating substrate 48 serves as a background mirror so that the mounted state of deep portions of the solder can be ascertained at the time of visual inspection of the mounted state of solder after the mounting of the semiconductor device to the substrate. As a result, the mounted state of the solder can be inspected without failure so that reduction in the number of defective products and increased yield can be attained.
1. A semiconductor device, comprising:
a first substrate formed of an insulating material having at least one through hole;
a semiconductor element secured to a desired position of a conductive pattern formed on a first main surface of the first substrate;
a plurality of electrodes for external connection on a second main surface of the first substrate located opposite to the first main surface of the first substrate that is electrically connected to the desired conductive pattern via the through hole;
a resin mold formed so as to cover, at least, the main surfaces of the first substrate,
wherein the semiconductor device is characterized in that a second substrate formed of an insulating material having approximately a same coefficient of linear expansion as the first substrate is adhered to the second main surface of the first substrate so that, at least, the electrodes are exposed; and
wherein a portion of the second substrate passes between at least two of the electrodes and extends from the second main surface at least as far as the electrodes extend from the second main surface.
2. The semiconductor device according to claim 1 , wherein the second substrate is adhered to the first substrate so that, at least, the sides of the electrodes located in the vicinity of outer sides of the second main surface of the first substrate are exposed from the outer sides.
3. The semiconductor device according to claim 1 , wherein the second substrate separates the electrodes from each other so that the electrodes exist independently in separate regions.
4. The semiconductor device according to claim 2 , wherein the second substrate is thicker than the electrodes for external connection.
5. The semiconductor device according to claim 2 , wherein the electrodes are plated with gold.
6. The semiconductor device according to claim 2 , wherein the first and second substrates are ceramic substrates.
7. The semiconductor device according to claim 2 , wherein the second substrate separates the electrodes from each other so that the electrodes exist independently in separate regions.
8. The semiconductor device according to claim 3 , wherein the second substrate is thicker than the electrodes.
9. The semiconductor device according to claim 3 , wherein the electrodes are plated with gold.
10. The semiconductor device according to claim 3 , wherein the first and second substrates are ceramic substrates.
11. The semiconductor device according to claim 1 , comprising a metal wire to electrically connect an electrode pad of the semiconductor element to the desired conductive pattern.
12. A method for forming a semiconductor device, comprising:
adhering a second substrate to a second surface of a first substrate;
subsequently mounting a semiconductor element on a first surface of the first substrate; and
electrically coupling the semiconductor element to one or more electrodes on the second surface of the first substrate,
wherein the electrodes are exposed;
wherein adhering the second substrate comprises positioning the second substrate such that a portion of the second substrate passes between at least two of the electrodes and extends from the second surface at least as far as the electrodes extend from the second surface.
13. The method of claim 12 , wherein a thickness of the second substrate is greater than a thickness of the electrode.
14. The method of claim 12 , wherein a coefficient of expansion of the first substrate and a coefficient of expansion of the second substrate are substantially equal.
15. The semiconductor device according to claim 1 , wherein the portion of the second substrate extends from the second main surface farther than the electrodes extend from the second main surface.
16. The semiconductor device according to claim 1 , wherein the second main surface defines an outer periphery thereof and wherein each terminal is exposed at the second main surface at a position that is a distance inside the outer periphery.
17. The semiconductor device according to claim 16 , wherein the distance is between approximately 0.05 mm and 0.1 mm.