IP Library Granted Patent US 6,902,955
Granted Patent B2
US 6,902,955 · App. 10/653,894 · Granted Jun 7, 2005

Method of manufacturing a semiconductor device having a flexible wiring substrate

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Quick Facts
Patent No.
US 6,902,955
App. No.
10/653,894
Granted
Jun 7, 2005
Kind
B2
Abstract

Peeling between a molding resin and a substrate is prevented to improve the quality of a semiconductor device. A film substrate capable of being deformed following shrinkage upon curing of a molding resin and having plural partitioned device areas is provided, then a block molding is performed so as to cover the plural device areas in a lump on a chip bearing surface side of the film substrate, and thereafter the film substrate is subjected to dicing wherein a cutting blade is advanced toward a block molding portion to divide the film substrate device area by device area in accordance with a down cutting method, whereby peeling of the substrate in the dicing work can be prevented.

Claims (25)

1. A method of manufacturing a semiconductor device, comprising the steps of:

providing a flexible wiring substrate having a front surface, a back surface opposite from the front surface, a plurality of device areas on the front surface and a plurality of electrodes formed on each device area;

providing semiconductor chips each having a main surface, a back surface opposed of the main surface thereof and a plurality of electrodes formed on the main surface;

mounting the semiconductor chips respectively on the device areas of the front surface of the flexible wiring substrate;

connecting electrodes of the semiconductor chips with the electrodes of the flexible wiring substrate on respective device areas of the front surface of the flexible wiring substrate by means of conductive members;

sealing the semiconductor chips and the plural device areas of the front surface of the flexible wiring substrate by a resin body formed according to a block molding method; and

cutting the flexible wiring substrate and the resin body to divide them between respective device areas of the front surface of the flexible wiring substrate using a cutting blade,

wherein, in the cutting step, a rotation axis of the cutting blade is positioned over the back surface of the flexible wiring substrate, and cutting all outlines of device areas by moving the cutting blade while feeding the wiring substrate and the resin body in a same direction as rotation of the cutting blade.

2. A method of manufacturing a semiconductor device according to claim 1 , wherein, the flexible wiring substrate has a plurality of wirings respectively connected with the electrodes thereof, and

in the cutting step, the wirings of the flexible wiring substrate are cut by the cutting blade.

3. A method of manufacturing a semiconductor device according to claim 2 , wherein, the wirings of the flexible wiring substrate are formed as power supply lines for plating.

4. A method of manufacturing a semiconductor device according to claim 2 , wherein, the wiring substrate having a plurality of conductive leads formed on the back surface of each device areas, the conductive leads are electrically connected with the electrodes of corresponding device areas, and

further comprising the step of affixing solder balls on the conductive leads before the cutting step.

5. A method of manufacturing a semiconductor device according to claim 4 , further comprising the step of conducting inspection after the cutting step.

6. A method of manufacturing a semiconductor device according to claim 5 , wherein, in the mounting step, facing the back surface of the semiconductor chip to corresponding device area of the front surface of the flexible wiring substrate, and arranging the semiconductor chip as the electrodes of the flexible wiring substrate is positioned at the outside of corresponding semiconductor chips,

wherein, in the connecting step, connecting the electrodes of the semiconductor chips with the electrodes of the flexible wiring substrate by wire bonding method with a plurality of wires, and

wherein, in the sealing step, sealing connecting portions of the wires and the electrodes of the flexible wiring substrate by the resin body.

7. A method of manufacturing a semiconductor device according to claim 6 , wherein the flexible wiring substrate is comprised of a polyimide film.

8. A method of manufacturing a semiconductor device according to claim 1 , wherein, the wiring substrate having a plurality of conductive lands formed on the back surface of each device areas, the conductive lands are electrically connected with the electrodes of corresponding device areas, and

further comprising the step of affixing solder balls on the conductive lands before the cutting step.

9. A method of manufacturing a semiconductor device according to claim 8 , wherein, further comprising the step of conducting inspection after the cutting step.

10. A method of manufacturing a semiconductor device according to claim 9 , wherein, in the mounting step, facing the back surface of the semiconductor chip to a corresponding device area of the front surface of the flexible wiring substrate, and arranging the semiconductor chip as the electrodes of the flexible wiring substrate is positioned at the an outside portion of corresponding semiconductor chips,

wherein, in the connecting step, connecting the electrodes of the semiconductor chips with the electrodes of the flexible wiring substrate by a wire bonding method with a plurality of wires, and

wherein, in the sealing step, sealing connecting portions of the wires and the electrodes of the flexible wiring substrate by the resin body.

11. A method of manufacturing a semiconductor device according to claim 10 , wherein the flexible wiring substrate is comprised of a polyimide film.

Assignments (8)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNMENT TO REFLECT THE TRANSFER OF OWNERSHIP SOLELY FROM HITACHI, LTD. TO RENESAS TECHNOLOGY CORP. PREVIOUSLY RECORDED AT REEL: 015447 FRAME: 0063. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded May 12, 2017
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 042452/0662 →
MERGER AND CHANGE OF NAME Recorded May 12, 2017
From: HITACHI HOKKAI SEMICONDUCTOR, LTD.; NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
To: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
Reel/Frame 042458/0109 →
CHANGE OF NAME Recorded May 12, 2017
From: RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
To: RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.
Reel/Frame 042484/0880 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2017
From: TOMIHARA, SEIICHI
To: HITACHI, LTD.; HITACHI HOKKAI SEMICONDUCTOR, LTD.
Reel/Frame 042356/0094 →
MERGER Recorded May 12, 2017
From: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
Reel/Frame 042609/0807 →
MERGER AND CHANGE OF NAME Recorded Jul 29, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024755/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 10, 2004
From: HITACHI, LTD. AND HITACHI HOKKAI SEMICONDUCTOR, LTD.
To: RENESAS TECHNOLOGY, CORP.
Reel/Frame 015447/0063 →