IP Library Granted Patent US 7,088,983
Granted Patent B2
US 7,088,983 · App. 10/654,919 · Granted Aug 8, 2006

Semiconductor device for radio communication device, and radio communication device using said semiconductor device

Assignee: Rohm Co., Ltd.
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Quick Facts
Patent No.
US 7,088,983
App. No.
10/654,919
Granted
Aug 8, 2006
Kind
B2
Abstract

A chip-on-chip-structure semiconductor device for a radio communication device, having a base band chip and a high-frequency chip piled up on and bonded to the surface thereof. The base band chip has a low-frequency signal processing unit for processing a signal in a first frequency band. The high-frequency chip has a high-frequency signal processing unit for processing a signal in a second frequency band of which frequency is higher than that of the first frequency band.

Claims (28)

1. A semiconductor device for a radio communication device in which a signal is received or transmitted a signal after frequency-conversion between frequency bands, the frequency bands including a first frequency band and a second frequency band that is higher in frequency than the first frequency band, wherein a semiconductor device for a radio communication device comprises:

a base band chip having a low-frequency signal processing unit for processing a signal in the first frequency band; and

a plurality of high-frequency chips piled up on and bonded to the surface of the base band chip, and having high-frequency signal processing units for processing a signal in the second frequency band, the high-frequency chips being electrically connected to the base band chip without any matching circuits interposed between the base band chip and the high-frequency chips,

wherein the high-frequency chips are disposed with the surfaces of the high-frequency chips opposite to the surface of the base band chip, and are connected to the base band chip by inter-chip connection members interposed between the opposite surfaces,

wherein the inter-chip connection members include metal projections on the surface of at least one of the base band chip and the high-frequency chips, the metal projections having a height that is smaller than the height of a bump,

wherein interconnections between the high-frequency chips are made via metal wiring on the surface of the base band chip, and

wherein the metal projections and the metal wiring are both formed of non-oxidizable metal films.

2. A semiconductor device for a radio communication device according to claim 1 , wherein the low-frequency signal processing unit includes a demodulator unit for demodulating a reception signal, and a signal processing unit for processing a signal demodulated by the demodulator unit.

3. A semiconductor device for a radio communication device according to claim 2 , wherein the high-frequency signal processing units include a transmitter unit for giving a transmission signal to an antenna, and a receiver unit for frequency-converting a reception signal from the antenna and giving the frequency-converted reception signal to the demodulator unit.

4. A semiconductor device for a radio communication device according to claim 3 , wherein the transmitter unit and the receiver unit are provided on different high-frequency chips.

5. A semiconductor device for a radio communication device according to claim 3 , wherein the receiver unit includes a filter for filtering a reception signal from the antenna.

6. A semiconductor device for a radio communication device according to claim 5 , wherein the filter is a surface acoustic wave filter.

7. A semiconductor device for a radio communication device according to claim 3 , wherein the high-frequency signal processing units include a switch unit which selects a transmission signal from the transmitter unit and provides the same to the antenna, or which selects a reception signal from the antenna and provides the same to the receiver unit.

8. A semiconductor device for a radio communication device according to claim 1 , wherein the base band chip and the high-frequency chips are made of respectively different types of semiconductor materials.

9. A semiconductor device for a radio communication device according to claim 1 , wherein the base band chip is made of a silicon semiconductor and the high-frequency chips are made of a compound semiconductor.

10. A radio communication device that includes (i) a semiconductor device for a radio communication device in which a signal is received or transmitted after frequency-conversion between the frequency bands, the frequency band including a first frequency band and a second frequency band that is higher in frequency than the first frequency band, and (ii) an antenna connected to the semiconductor device, wherein the semiconductor device comprises,

a base band chip having a low-frequency signal processing unit for processing a signal in the first frequency band; and

a plurality of high-frequency chips piled up on and bonded to a surface of the base band chip, and having a high-frequency signal processing units for processing a signal in the second frequency band, the high-frequency chips is being electrically connected to the base band chip without any matching circuits interposed between the high-frequency chips and the base band chip,

wherein the high-frequency chips are disposed with the surfaces of the high-frequency chips opposite to the surface of the base band chip, and are connected to the base band chip by inter-chip connection members interposed between the opposite surfaces,

wherein the inter-chip connection members include metal projections on the surface of at least one of the base band chip and the high-frequency chips, the metal projections having a height that is smaller than the height of a bump,

wherein interconnections between the high-frequency chips are made via metal wiring on the surface of the base band chip, and

wherein the metal projections and the metal wiring are both formed of non-oxidizable metal films.

11. A radio communication device according to claim 10 , wherein the low-frequency signal processing unit includes a demodulator unit for demodulating a reception signal, and a signal processing unit for processing a signal demodulated by the demodulator unit.

12. A radio communication device according to claim 11 , wherein the high-frequency signal processing units include a transmitter unit for giving a transmission signal to the antenna, and a receiver unit for frequency-converting a reception signal from the antenna and giving the frequency-converted reception signal to the demodulator unit.

13. A radio communication device according to claim 12 , wherein the receiver unit includes a filter for filtering a reception signal from the antenna.

14. A radio communication device according to claim 13 , wherein the filter is a surface acoustic wave filter.

15. A radio communication device according to claim 12 , wherein the high-frequency signal processing units include a switch unit which selects a transmission signal from the transmitter unit and provides the same to the antenna, or which selects a reception signal from the antenna and provides the same to the receiver unit.

16. A radio communication device according to claim 10 , wherein the base band chip and the high-frequency chip are made of respectively different types of semiconductor materials.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2020
From: ACHLYS TECHNOLOGIES INC.
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 052957/0699 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 31, 2020
From: ROHM CO., LTD.
To: ACHLYS TECHNOLOGIES INC.
Reel/Frame 052273/0877 →
Priority Claims (1)
JP 11-026540 · Feb 3, 1999 · national
Continuity (2)
Continuation 0949325100 · Jan 28, 2000
Related Publication 20040043732A1 · Mar 4, 2004