MOSFET-fused nonvolatile read-only memory cell (MOFROM)
View Patent ↗With directly biasing drain to source in a floating-gate N-MOSFET, a new MOSFET-fused nonvolatile ROM cell (MOFROM) is provided by tunneling-induced punch through of the drain junction to the source. The MOFROM is completely compatible with the mainstream standard CMOS process. The standard MOSFET presents an “OFF” state before the burning and an “ON” state with a stable low-resistance path after the burning.
1. A method of operating a transistor device comprising:
floating a gate electrode of the transistor device;
applying a voltage between a drain and a source electrode of the transistor device to cause a burned region in a channel region of the transistor device, even after the voltage is removed.
2. The method of claim 1 wherein the burned region provides a low impedance path between the drain and source electrodes.
3. The method of claim 1 wherein the burned region extends from the drain to the source and has a deeper depth closer to the drain than the source electrode.
4. The method of claim 1 wherein an impedance for the transistor device is about five times or greater than that for transistor device with the burned region.
5. A method of operating an electronic system comprising programming one or more transistor devices according to the method recited in claim 1 .
6. The method of claim 1 wherein the transistor device has a width of 0.22 microns or less and a length of 0.13 microns or less.
7. The method of claim 1 wherein the transistor device is at least one of a MOSFET transistor, n-type MOSFET transistor, or p-type MOSFET transistor.
8. The method of claim 1 wherein the applying a voltage comprises:
applying a breakdown voltage to the drain electrode of the transistor device; and
after applying the breakdown voltage, applying a burning voltage to the drain electrode of the transistor device, wherein the burning voltage is greater than the breakdown voltage.