Method for reducing corrosion of metal surfaces during semiconductor processing
View Patent ↗A semiconductor process exposes metal in anticipation of an additional processing step that includes a deposition of a layer. Between the two processing steps, the exposed metal is exposed to ambient conditions that may include humidity. The effect of the humidity is potentially to cause corrosion of the exposed metal causing a yield loss. In order to withstand the various time periods that may occur between processing steps, an inhibitor is applied to the exposed surface causing the formation of a very thin protective layer on the exposed metal, which greatly inhibits corrosion. This thin protective layer does not cause any problems with the subsequent step because the typical following steps all, by their very nature, remove the protective layer. Thus, the time period between the processing step that exposes the metal and the next step is no longer critical due to the protective layer.
1. A method for preventing corrosion of an exposed metal surface of a metal layer at a bottom of a via hole through a dielectric layer of a semiconductor device during semiconductor processing, comprising:
depositing and selectively bonding a sacrificial protective layer overlying the exposed metal surface of the semiconductor device, wherein the sacrificial layer protects the exposed metal surface at the bottom of the via hole from deleterious effects until subsequent processing of the semiconductor device; and
subsequent processing of the semiconductor device, wherein the subsequent processing comprises a step of depositing a subsequent layer on the exposed metal surface, wherein the step of depositing the subsequent layer is begun without first removing the sacrificial layer and wherein the sacrificial protective layer is removed prior to completion of the step of depositing,
wherein the depositing and selectively bonding comprises applying a corrosion inhibitor in the vapor phase to form the sacrificial layer on the exposed metal layer surface and the sacrificial layer consists of a monolayer of corrosion inhibitor.
2. The method of claim 1 , wherein the metal comprises copper.
3. The method of claim 1 , wherein the subsequent processing comprises electroplating the metal layer with copper.
4. The method of claim 1 , wherein the metal layer comprises aluminum.