Cleaning chamber surfaces to recover metal-containing compounds
View Patent ↗In a method of cleaning metal-containing deposits such as tantalum from a surface of a process chamber component, such as a metal surface, the surface is immersed in a cleaning solution. In one version, the cleaning solution is a solution having HF and HNO 3 in a ratio that removes deposits from the surface substantially without eroding the surface. In another version, the cleaning solution is a solution having KOH and H 2 O 2 . The solution can be treated after cleaning the surface to recover tantalum-containing materials and one or more of the cleaning solutions.
1. A method of cleaning tantalum-containing deposits from a surface of a process chamber component, the method comprising:
immersing the surface of the component comprising the tantalum-containing deposits in a cleaning solution comprising a ratio of HF to HNO 3 of from about 1:8 to about 1:30 by weight to clean tantalum-containing deposits from the surface,
whereby the tantalum-containing deposits are removed from the surface substantially without eroding the surface.
2. A method according to claim 1 wherein the solution comprises less than about 10% by weight of HF.
3. A method according to claim 1 further comprising prior to the step immersing, exposing the surface of the process chamber component to an energized gas.
4. A method according to claim 1 wherein the surface of the process chamber component has a textured surface having a surface roughness average of from about 63.5 micrometers to about 101.6 micrometers,and further comprising immersing the textured surface in the cleaning solution.
5. A method to claim 1 wherein the surface of a process chamber component has a textured surface having depressions with diameters of from about 0.1 mm to about 3.5 mm, and further comprising immersing the textured surface in the cleaning solution.
6. A component cleaned according to the method of claim 1 , the component comprising a portion of one or more of an enclosure wall, chamber shield, target, cover ring, deposition ring, support ring, insulator ring, coil, coil support, shutter disk, clamp shield, and substrate support; and
wherein the component is substantially absent tantalum-containing deposits after cleaning of the component.
7. A method according to claim 1 wherein the cleaning solution comprises at least about 60% by weight of HNO 3 .
8. A method according to claim 3 wherein the surface of the process chamber component is a metal surface.
9. A method according to claim 3 wherein the surface of the process chamber component is a ceramic surface.
10. A method of cleaning tantalum-containing deposits from a textured surface of a process chamber component, the method comprising:
(a) providing a component having a textured surface, the textured surface comprising electron beam textured depressions having the tantalum-containing deposits therein; and
(b) immersing the electron beam textured depressions of the textured surface in a cleaning solution comprising a ratio of HF to HNO 3 of from about 1:8 to about 1:30 by weight, to clean the tantalum-containing deposits from the electron beam textured depressions,
whereby the tantalum-contained deposits removed from the textured surface substantially without eroding the textured surface.
11. A method according to claim 10 wherein (b) the electron beam textured depressions have diameters of from about 0.1 mm to about 3.5 mm and further comprising immersing the textured surface in the cleaning solution.
12. A method according to claim 10 wherein (b) the textured surface has a surface roughness average of from about 63.5 micrometers to about 101.6 micrometers and further comprising immersing said textured surface in the cleaning solution.
13. A method according to claim 10 wherein (b) comprises immersing in a cleaning solution comprising less than about 10% by weight of HF.
14. A method according to claim 10 wherein (b) comprises immersing in a cleaning solution comprising at least about 60% by weight of HNO 3 .