Methods of manufacturing semiconductor devices
View Patent ↗Disclosed are methods of manufacturing semiconductor devices, which may solve problems such as a short of upper wiring, etc., which are caused by a metal residue generated during chemical mechanical polishing of metallization of the semiconductor device, by depositing a predetermined insulating layer on the metal residue. The method may include forming a first insulating layer having an opening on a semiconductor substrate, depositing a metal layer on the first insulating layer to sufficiently fill the opening, planarizing the metal layer to expose the first insulating layer, forming a second insulating layer on the exposed first insulating layer and the metal layer, selectively etching and removing the second insulating layer to expose the metal layer, and forming a metallization layer on the metal layer.
1. A method of manufacturing a semiconductor device, comprising:
forming a first insulating layer having an opening on a semiconductor substrate, wherein the first insulating layer is formed of a first material;
depositing a metal layer on the first insulating layer to sufficiently fill the opening;
planarizing the metal layer to expose the first insulating layer;
etching the first insulating layer to cause the surface of the metal layer to protrude from a surface of the first insulating layer, wherein the first insulating layer is etched at a depth of 50 to 200 Å;
forming a second insulating layer in contact with the exposed first insulating layer and the metal layer after etching the first insulating layer, wherein the second insulating layer is formed of a second material that is the same material as the first material;
selectively etching and removing the second insulating layer to expose the metal layer; and
forming a metallization layer on the metal layer.
2. A method as defined by claim 1 , wherein the second insulating layer is formed using boro-phospho-silicato glass (BPSG).
3. A method as defined by claim 1 , wherein the second insulating layer is formed at a thickness of 300 to 1000 Å.