IP Library › Granted Patent US 7,389,465
Granted Patent B2
US 7,389,465 · App. 10/769,001 · Granted Jun 17, 2008

Error detection and correction scheme for a memory device

Assignee: Micron Technology, Inc.
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Quick Facts
Patent No.
US 7,389,465
App. No.
10/769,001
Granted
Jun 17, 2008
Kind
B2
Abstract

Data is read from a memory array. Before being stored in a data buffer, a Hamming code detection operation and a Reed-Solomon code detection operation are operated in parallel to determine if the data word has any errors. The results of the parallel detection operations are communicated to a controller circuit. If an error is present that can be corrected by the Hamming code correction operation, this is performed and the Reed-Solomon code detection operation is performed on the corrected word. If the error is uncorrectable by the Hamming code, the Reed-Solomon code correction operation is performed on the word.

Claims (50)

1. A method for error detection and correction in a memory device having a memory array, a data buffer, and a controller, the method comprising:

reading data from the memory array;

performing first and second error detection operations, each performed substantially in parallel with the other on the read data;

reporting results of the first and the second error detection operations to the controller;

if the first error detection operation detects an error correctable by a first error correction operation and the second error detection operation detects an error, correcting the error with the first error correction operation; and

performing the second error detection operation again on the data corrected by the first error correction operation.

2. The method of claim 1 wherein the first error detection operation is a Hamming code error detection and the second error detection operation is a Reed-Solomon code error detection.

3. The method of claim 1 wherein the first and second error detection operations are performed while reading the data from the memory array.

4. The method of claim 1 and further including storing the data in the data buffer.

5. The method of claim 1 and further including:

if the data still has the error after the second error detection operation, correcting the error with a second error correction operation.

6. The method of claim 1 and further including:

if the first error detection operation detects an error that is uncorrectable by a first error correction operation and the second error detection operation detects an error, correcting the error with a second error correction operation.

7. The method of claim 1 and further including:

if the first error detection operation does not detect an error and the second error detection operation detects an error, correcting the error with a second error correction operation.

8. A method for error detection and correction in a memory device having a memory array, a data buffer, and a controller, the method comprising:

reading data from the memory array;

performing a Hamming code and a Reed-Solomon code error detection operation substantially in parallel;

reporting results of the Hamming code and the Reed-Solomon code error detection operations to the controller; and

storing the data in the data buffer.

9. The method of claim 8 and further including:

if the Hamming code error detection operation detects an error that is uncorrectable by a Hamming code error correction operation and the Reed-Solomon code error detection operation detects an error, correcting the error with a Reed-Solomon code error correction operation.

10. The method of claim 8 and further including:

if the Hamming code error detection operation does not detect an error and the Reed-Solomon code error detection operation detects an error, correcting the error with a Reed-Solomon code error correction operation.

11. The method of claim 8 and further including:

if the Hamming code error detection operation detects an error correctable by a Hamming code error correction operation and the Reed-Solomon code error detection operation detects an error, correcting the error with the Hamming code error correction operation; and

performing the Reed-Solomon code error detection operation again on the data corrected by the Hamming code error correction operation.

12. The method of claim 11 and further including:

if the data still has the error after the Reed-Solomon code error detection operation, correcting the error with a Reed-Solomon code error correction operation.

13. A memory device comprising:

a NAND-type flash memory array;

a data buffer;

a controller circuit that is capable of reading data from the memory array and storing the read data in the data buffer;

a first error detection and correction routine that detects errors in the read data and communicates a first error detection result to the controller circuit; and

a second error detection and correction routine that operates in parallel with the first error detection and correction routine in detecting errors in the read data and communicates a second error detection result to the controller circuit.

14. The memory device of claim 13 wherein the memory array is a NOR-type flash memory array.

15. The memory device of claim 13 wherein the first error detection and correction routine is a Hamming code error detection and correction routine.

16. The memory device of claim 13 wherein the second error detection and correction routine is a Reed-Solomon code error detection and correction routine.

17. A memory device comprising:

a memory array;

a data buffer; and

a controller circuit that is capable of reading data from the memory array and storing the data in the data buffer; the controller executing a Hamming code error detection and correction routine that detects errors in the read data and communicates a first error detection result to the controller circuit, the controller further executing, in parallel with the Hamming code error detection and correction routine, a Reed-Solomon code error detection and correction routine that detects errors in the read data and communicates a second error detection result to the controller circuit.

18. An electronic system comprising:

a processor that generates control signals for the electronic system; and

a memory device comprising:

a NAND-type flash memory array;

a data buffer;

a controller circuit that is capable of reading data from the memory array and storing the read data in the data buffer;

a first error detection and correction routine that detects errors in the read data and communicates a first error detection result to the controller circuit; and

a second error detection and correction routine that operates in parallel with the first error detection and correction routine in detecting errors in the read data and communicates a second error detection result to the controller circuit.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2004
From: RADKE, WILLIAM H.; SWAMINATHAN, SHUBA; KEAYS, BRADY L.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 014960/0207 →
Continuity (1)
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