Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor
View Patent ↗A method for producing a silicon-on-insulator layer structure on a silicon surface with any desired geometry can locally produce the silicon-on-insulator structure. The method includes formation of mesopores in the silicon surface region, oxidation of the mesopore surface to form silicon oxide and rib regions from silicon in single-crystal form; and execution of a selective epitaxy process that that silicon grows on the uncovered rib regions, selectively with respect to the silicon oxide regions. Rib regions remain in place between adjacent mesopores, this step being ended as soon as a predetermined minimum silicon wall thickness of the rib regions is reached, the uncovering of the rib regions, which are arranged at the end remote from the semiconductor substrate between adjacent mesopores. The method can be used to fabricate a vertical transistor and a memory cell having a select transistor of this type.
1. A method for forming a layer stack comprising silicon oxide and a monocrystalline silicon layer on a silicon surface region of a semiconductor substrate, comprising:
forming mesopores in the silicon surface region;
oxidizing the mesopore surface to form silicon oxide and rib regions from silicon in single-crystal form, the rib regions remaining in place between adjacent mesopores, the oxidizing ending when a predetermined minimum silicon wall thickness of the rib regions is reached;
uncovering the rib regions, the rib regions being arranged at an end remote from the semiconductor substrate, between adjacent mesopores; and carrying out a selective epitaxy process such that silicon grows on the uncovered rib regions, selectively with respect to the silicon oxide regions.
2. The method according to claim 1 , further comprising:
heat-treating such that the silicon rib regions are oxidized.
3. The method according to claim 2 , wherein the oxidation of the silicon rib regions is carried out after the selective epitaxy process has commenced and before a continuous epitaxial layer has been reached.
4. The method according to claim 1 , wherein a diameter of the rib regions ranges from 5 to 15 nm.
5. The method according to claim 1 , wherein the rib regions arranged at an end remote from the semiconductor substrate are uncovered by wet-chemical etching.
6. The method according to claim 1 , wherein a thickness of the oxide layer formed ranges from 10 to 50 nm.
7. The method according to claim 1 , wherein the oxidation of the mesopore surface is carried out electrochemically.
8. The method according to claim 1 , wherein the oxidation of the mesopore surfaces ends when an end point of the oxide formation has been reached.