Semiconductor component and method of manufacture
View Patent ↗A semiconductor component having smooth, void-free conductive layers and a method for manufacturing the semiconductor component. Surface features such as gate structures are formed on a semiconductor substrate. A layer of insulating material is formed on the gate structures and a layer of polysilicon is formed on the layer of insulating material. The layer of polysilicon is annealed in a hydrogen ambient to redistribute the silicon atoms of the polysilicon layer. Redistribution of the atoms fills voids that may be present in the layer of polysilicon and smoothes the surface of the layer of polysilicon. Another layer of polysilicon is formed over the annealed layer of polysilicon. This polysilicon layer is annealed in a hydrogen ambient to redistribute the silicon atoms and smooth the surface of the polysilicon layer, thereby forming a subsequently annealed polysilicon layer. Control gate structures are formed from the subsequently annealed polysilicon layer.
1. A method for manufacturing a semiconductor component, comprising:
providing a semiconductor substrate having a major surface;
forming first and second surface features over the major surface;
forming a first polysilicon layer over the first and second surface features; and
redistributing the first polysilicon layer in at least the region between the first and second surface features.
2. The method of claim 1 , wherein redistributing the first polysilicon layer comprises annealing the first polysilicon layer.
3. The method of claim 2 , wherein annealing the first polysilicon layer comprises annealing the first polysilicon layer in an ambient comprising hydrogen.
4. The method of claim 3 , wherein annealing the first polysilicon layer includes heating the first polysilicon layer to a temperature ranging between approximately 750 degrees Celsius and approximately 1,100 degrees Celsius.
5. The method of claim 2 , further including forming a second polysilicon layer over the first polysilicon layer.
6. The method of claim 5 , further including redistributing the second polysilicon layer.
7. The method of claim 6 , wherein redistributing the second polysilicon layer includes annealing the second polysilicon layer in a hydrogen ambient.
8. The method of claim 7 , wherein annealing the second polysilicon layer includes heating the second polysilicon layer to a temperature of at least 750 degrees Celsius.
9. A method for manufacturing a semiconductor component, comprising:
providing a semiconductor substrate having a major surface;
forming a first dielectric material on the major surface;
forming first and second conductors over first and second portions of the first dielectric material, the first and second conductors having a gap therebetween;
forming a second dielectric material over the first and second conductors;
forming a first layer of polysilicon over the first and second conductors; and
repositioning atoms of the first layer of polysilicon.
10. The method of claim 9 , wherein forming the first and second conductors comprises:
forming a second layer of polysilicon over the first dielectric material; and
patterning the second layer of polysilicon over the first dielectric material to form the first and second conductors.
11. The method of claim 9 , wherein forming the first layer of polysilicon over the first and second conductors comprises forming a third dielectric material on the first and second conductors and forming the first layer of polysilicon on the third dielectric material.
12. The method of claim 11 , wherein repositioning atoms of the first layer of polysilicon comprises annealing the first layer of polysilicon.
13. The method of claim 11 , wherein repositioning atoms of the first layer of polysilicon comprises heating the first layer of polysilicon to a temperature of at least 750 degrees Celsius.
14. The method of claim 11 , further including forming a second layer of polysilicon over the first layer of polysilicon.
15. The method of claim 14 , further including annealing the second layer of polysilicon.
16. The method of claim 11 , wherein forming the first layer of polysilicon includes forming the first layer of polysilicon to have a thickness ranging between a monolayer of polysilicon and about 300 Angstroms.
17. The method of claim 9 , wherein repositioning atoms of the first layer of polysilicon includes repositioning the atoms in an ambient comprising hydrogen.