IP Library Granted Patent US 7,482,696
Granted Patent B2
US 7,482,696 · App. 10/826,003 · Granted Jan 27, 2009

Light-emitting diode package structure

Assignee: South Epitaxy Corporation
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Quick Facts
Patent No.
US 7,482,696
App. No.
10/826,003
Granted
Jan 27, 2009
Kind
B2
Abstract

A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.

Claims (13)

1. A light-emitting diode package structure, comprising:

a semiconductor sub-mount having a first surface with a cavity therein and comprising a first conductive type semiconductor substrate and a second conductive type region enclosed by the first conductive type semiconductor substrate;

a first patterned conductive-reflective film set up on a portion of the first surface, a first sidewall of the cavity and a bottom surface of the cavity, wherein the first patterned conductive-reflective film contacts with the first sidewall of the cavity and a part of the first conductive type semiconductor substrate;

a second patterned conductive-reflective film set up on a portion of the first surface, a second sidewall of the cavity and a bottom surface of the cavity, wherein the second patterned conductive-reflective film covers the second sidewall of the cavity;

an insulating layer only set up in-between the semiconductor sub-mount and the second patterned conductive-reflective film; and

a light-emitting diode chip set up inside the cavity of the semiconductor sub-mount, wherein the light-emitting diode has a first electrode and a second electrode electrically connected to the first patterned conductive-reflective film and the second patterned conductive-reflective film.

2. The light-emitting diode package structure of claim 1 , wherein the package further comprises a pair of bumps set up between the first electrode of the light-emitting diode and the first patterned conductive-reflective film as well as the second electrode of the light-emitting diode and the second patterned conductive-reflective film.

3. The light-emitting diode package structure of claim 2 , wherein material constituting the bumps comprises lead-tin, gold-tin alloy or gold.

4. The light-emitting diode package structure of claim 1 , wherein the package further comprises a first bonding pad and a second bonding pad set up on the first patterned conductive-reflective film and the second patterned conductive-reflective film for connecting electrically with an external circuit board.

5. The light-emitting diode package structure of claim 1 , wherein the sidewall and the bottom surface of the cavity form an obtuse angle.

6. The light-emitting diode package structure of claim 1 , wherein material constituting the semiconductor sub-mount comprises silicon, gallium arsenide, SiC, or zinc oxide.

7. The light-emitting diode package structure of claim 6 , wherein the first conductive type semiconductor substrate is an N-doped material layer and the second conductive type region is a P-doped material layer.

8. The light-emitting diode package structure of claim 6 , wherein the first conductive type semiconductor substrate is a P-doped material layer and the second conductive type region is an N-doped material layer.

Assignments (3)
MERGER Recorded Oct 25, 2011
From: SOUTH EPITAXY CORPORATION
To: EPITECH TECHNOLOGY CORPORATION
Reel/Frame 027118/0680 →
MERGER Recorded Oct 25, 2011
From: EPITECH TECHNOLOGY CORPORATION
To: EPISTAR CORPORATION
Reel/Frame 027118/0696 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2004
From: SHEI, SHIH-CHANG; SHEU, JINN-KONG
To: SOUTH EPITAXY CORPORATION
Reel/Frame 015230/0933 →
Priority Claims (1)
TW 92134974 A · Dec 11, 2003 · national
Continuity (1)
Related Publication 20050127485A1 · Jun 16, 2005