Memory with adjustable access time

1. A memory comprising:

a memory array;

an address buffer configured to receive an external address;

a refresh address counter configured to generate a refresh address;

a first circuit configured to detect a distance between the external address and refresh address; and

a second circuit configured to generate at least one timing signal for accessing data associated with the external address from the memory array in response to the distance.

2. The memory of claim 1 wherein the memory array comprises a sense amplifier, and wherein the timing signal is configured to cause the sense amplifier to be activated.

3. The memory of claim 2 wherein the second circuit is configured to generate the timing signal at a first time in response to the distance comprising a first value, and wherein the second circuit is configured to generate the timing signal at a second time subsequent to the first time in response to the distance comprising a second value.

4. The memory of claim 3 wherein the memory array comprises a first region and a second region, wherein the first value is associated with the first region, and wherein the second value is associated with the second region.

5. The memory of claim 4 wherein the first region and the second region are defined relative to the external address.

6. The memory of claim 1 wherein the timing signal is configured to cause the external address to stop being provided to the memory array.

7. The memory of claim 6 wherein the second circuit is configured to generate the timing signal at a first time in response to the distance comprising a first value, and wherein the second circuit is configured to generate the timing signal at a second time subsequent to the first time in response to the distance comprising a second value.

8. The memory of claim 7 wherein the memory array comprises a first region and a second region, wherein the first value is associated with the first region, and wherein the second value is associated with the second region.

9. The memory of claim 8 wherein the first region and the second region are defined relative to the external address.

10. A method performed by a pseudo-static random access memory (PSRAM) that comprises a memory array, the method comprising:

receiving an external address from a host;

comparing the external address to a refresh address generated by the PSRAM; and

adjusting a first time period associated with accessing data associated with the external address from the memory array in accordance with comparing the external address to the refresh address.

11. The method of claim 10 further comprising:

performing a refresh operation to the memory array using the refresh address using a second time period in response to receiving the external address from the host.

12. The method of claim 11 further comprising:

performing an access to the memory array using the external address using the first time period in response to receiving the external address from the host.

13. The method of claim 12 wherein the first time period is less than the second time period.

14. The method of claim 12 further comprising:

adjusting the first time period by providing a signal configured to activate a sense amplifier in the memory array at a time determined by comparing the external address to a refresh address.

15. The method of claim 12 further comprising:

adjusting the first time period by providing a signal configured to stop the external address from being provided to the memory array at a time determined by comparing the external address to a refresh address.

16. The method of claim 12 further comprising:

comparing the external address to the refresh address by identifying which one of a plurality of regions includes the refresh address.

17. A system comprising:

a memory array comprising a first plurality of memory cells associated with a first address and a plurality of sense amplifiers associated with the plurality of memory cells;

an address buffer configured to receive the first address from a host;

a refresh address counter configured to generate a second address;

means for comparing the first address to the second address to determine when the plurality of memory cells associated with the external address was refreshed;

means for generating a first signal configured to cause the plurality of sense amplifiers to be activated at a first time determined by comparing the first address to the second address; and

means for generating a second signal configured to cause the first address to stop being driven to the memory array at a second time determined by comparing the first address to the second address.

18. The system of claim 17 wherein means for comparing the first address to the second address is configured to generate a third signal that indicates a relative distance between the first address and the second address.

19. The system of claim 17 further comprising:

a control circuit configured to cause a second plurality of memory cells associated with the second address to be refreshed in response to the first address being received by the address buffer.

20. The system of claim 19 wherein the control circuit is configured to cause the first plurality of memory cells to be accessed using the first address in response to the first address being received by the address buffer.

21. The system of claim 20 wherein the control circuit is configured to cause the second plurality of memory cells associated to be refreshed during the access to the first plurality of memory cells in response to the first address being equal to the second address.

22. The system of claim 20 wherein the control circuit configured to cause the second plurality of memory cells associated with the second address to be refreshed using a first time period, and wherein the control circuit is configured to cause the first plurality of memory cells to be accessed using the first address using a second time period that is less than the first time period.