Semiconductor component and method of manufacturing
View Patent ↗A semiconductor component includes a semiconductor layer ( 110 ) having a trench ( 326 ). The trench has first and second sides. A portion ( 713 ) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode ( 540, 1240 ) in the trench. The semiconductor component further includes a channel region ( 120 ) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region ( 755 ) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.
1. A semiconductor component comprising:
a semiconductor layer having a first trench with first and second sides, wherein a portion of the semiconductor layer has a first conductivity type and a first charge density;
a control electrode in the first trench;
an electrically insulative layer in the first trench between the semiconductor layer and the control electrode;
a channel region in the semiconductor layer and adjacent to the first trench;
a first region in the semiconductor layer, having a second conductivty type, and having a second charge density balancing tie first charge density to form a super junction structure, and having a first portion of the first region at the first side of the first trench; and
a semiconductor substrate underneath the semiconductor layer and having the first conductivity type and a third charge density greater than the first and second charge densities.
2. The semiconductor component of claim 1 , wherein:
the semiconductor layer has a first surface and a second surface opposite the first surface;
the first trench is located in the second surface of the semiconductor layer;
the first region extends continuously along a height of the semiconductor layer from the first surface of the semiconductor layer toward the second surface of the semiconductor layer; and
the first region is contiguous with the first surface of the semiconductor layer.
3. The semiconductor component of claim 2 , wherein:
the first region further includes a second portion at the second side of the first trench;
the first trench extends into the semiconductor layer deeper than the channel region;
the channel region is absent underneath the first trench;
the first region is absent underneath the first trench; and
the portion of the semiconductor layer is located under the first trench and between the first and second portions of the first region.
4. The semiconductor component of claim 3 , wherein:
the semiconductor layer has a second trench in the second surface of the semiconductor layer; and
the second trench extends deeper into the semiconductor layer from the second surface of the semiconductor layer than the first trench.
5. The semiconductor component of claim 4 , wherein the second trench extends from the second surface of the semiconductor layer to the first surface of the semiconductor layer.
6. The semiconductor component of claim 5 , wherein the second trench extends into the semiconductor substrate.
7. The semiconductor component of claim 4 , wherein the second trench is contiguous with the first and second portions of the first region.
8. The semiconductor component of claim 1 wherein the semiconductor layer has a first volume, and wherein the first region has a second volume different than the first volume.
9. The semiconductor component of claim 1 further comprising:
a source region in the channel region;
a second trench in the semiconductor layer and having a sidewall contiguous with the channel region and the source region; and
an electrical contact coupled to the channel region and the source region along a portion of the sidewall of the second trench.