Method for making high density nonvolatile memory
View Patent ↗An improved method for fabricating a three dimensional monolithic memory with increased density. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements preferably comprising two diode portions and an antifuse, then filling and planarizing; and continuing to form conductors and semiconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.
1. A method of making a monolithic three dimensional memory array comprising:
forming a plurality of substantially parallel first conductors;
depositing a semiconductor layer stack;
patterning and etching the layer stack to form a plurality of first
semiconductor elements over the first conductors, filling, and
planarizing,
wherein the memory array has a minimum feature sizc between 300
angstroms and 1500 angstroms.
2. The method of claim 1 , wherein at least one semiconductor element comprises:
two portions of an incipient diode separated by an antifuse, or a diode adjacent an antifuse.
3. The method of claim 2 , wherein at least one semiconductor element comprises two portions of an incipient diode separated by an antifuse.
4. The method of claim 2 , wherein at least one semiconductor element comprises a diode adjacent an antifuse.
5. The method of claim 4 , wherein the antifuse is above the diode.
6. The method of claim 4 , wherein the antifuse is below the diode.
7. A method for making a first story of three-dimensional memory cells, the method comprising:
forming first conductors comprising first conductive layers over a
substrate;
depositing layers of silicon over the first conductors:
patterning the layers of silicon in a single patterning operation into posts;
and
forming second conductors comprising second conductive layers over the
semiconductor elements, wherein
etch undercut between any layers in any cell is less than 200 angstroms.
8. The method of claim 7 , wherein the etch undercut is less than 100 angstroms.
9. The method of claim 8 , wherein the posts are substantially cylindrical in shape.
10. The method of claim 9 , wherein the first conductive layers comprise a conducting layer on an adhesion layer.
11. The method of claim 10 , wherein the step of forming the first conductors comprises depositing a material for the adhesion layer, depositing a material for the conducting layer, and then patterning and etching both materials.
12. The method of claim 11 , wherein the material for the adhesion layer comprises TiN and the material for the conducting layer comprises tungsten.
13. The method of claim 7 , including forming a barrier layer as the bottom layer of the posts or the top layer of the first conductors.
14. The method of claim 13 , wherein the barrier layer comprises TiN.
15. The method of claim 7 , wherein the second conductive layers comprises a conducting layer on an adhesion layer.
16. The method of claim 15 , wherein the step of forming the second conductors comprises depositing a material for the adhesion layer, depositing a material for the conducting layer, and then patterning and etching both materials.
17. The method of claim 7 , further comprising forming a second story of memory cells over the first memory cells.