Lightshield architecture for interline transfer image sensors
View Patent ↗An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.
1. An image sensor comprising:
(a) a substrate;
(b) a photo-sensitive area disposed in the substrate;
(c) a transfer mechanism disposed in the substrate for receiving charge from the photo-sensitive area;
(d) a vertical charge-coupled device for receiving charge from the transfer mechanism;
(e) a gate dielectric spanning at least a portion of the vertical charge-coupled device;
(f) a gate electrode spanning at least a portion of the vertical charge-coupled device;
(g) an insulator spanning at least a portion of the vertical charge-coupled device having an opening therethrough;
(h) a first lightshield spanning at least a portion of the vertical charge-coupled device having an opening therethrough; and
(i) a second lightshield forming a plug disposed through both the opening in the insulator and the opening in the first lightshield; wherein the plug contacts the gate electrode and the first lightshield so that the gate electrode is electrically connected to the first lightshield.
2. The image sensor as in claim 1 , wherein the plug comprises two metals.
3. The image sensor as in claim 2 , wherein the two metals are aluminum and titanium/tungsten.
4. The image sensor as in claim 1 , wherein the plug comprises one metal.
5. The image sensor as in claim 4 , wherein the one metal is titanium/tungsten.
6. The image sensor as in claim 1 , wherein the opening in the lightshield occurs in a subset of a plurality of the gate electrodes.
7. The image sensor as in claim 1 , wherein the plug is a part of continuous metal strip extending over a plurality of gate electrodes.
8. A camera comprising:
an image sensor comprising:
(a) a substrate;
(b) a photo-sensitive area disposed in the substrate;
(c) a transfer mechanism disposed in the substrate for receiving charge from the photo-sensitive area;
(d) a vertical charge-coupled device for receiving charge from the transfer mechanism;
(e) a gate dielectric spanning at least a portion of the vertical charge-coupled device;
(f) a gate electrode spanning at least a portion of the vertical charge-coupled device;
(g) an insulator spanning at least a portion of the vertical charge-coupled device having an opening therethrough;
(h) a first lightshield spanning at least a portion of the vertical charge-coupled device having an opening therethrough; and
(i) a second lightshield forming a plug disposed through both the opening in the insulator and the opening in the first lightshield; wherein the plug contacts the gate electrode and the first lightshield so that the gate electrode is electrically connected to the first lightshield.
9. The camera as in claim 8 , wherein the plug comprises two metals.
10. The camera as in claim 9 , wherein the two metals are aluminum and titanium/tungsten.
11. The camera as in claim 8 , wherein the plug comprises one metal.
12. The camera as in claim 11 , wherein the one metal is titanium/tungsten.
13. The camera as in claim 8 , wherein the opening in the lightshield occurs in a subset of a plurality of the gate electrodes.
14. The camera as in claim 8 , wherein the plug is a part of continuous metal strip extending over a plurality of gate elect