Patent Assignment
Reel/Frame 033460/0457
Assignment of Assignor's Interest
Recorded: 2014-08-01
Pages: 30
Assignor
TRUESENSE IMAGING, INC.
Executed: 2014-07-30
Assignee
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
5005 E. MCDOWELL ROAD, MAILDROP A700, PHOENIX, ARIZONA, 85008
Covered Properties
(137)
Transfer Region Design for Charge-Coupled Device Image Sensor
Patent:
5,235,196 →
Application:
07/918,093 →
Apparatus and Method for Controlling a High Resolution Charge Coupled Device Image Sensor to Provide Alternative Modes of Picture Imaging
Patent:
5,396,290 →
Application:
08/033,908 →
Method of Making Two-Phase Charge Coupled Device
Patent:
5,292,682 →
Application:
08/086,072 →
Antiblooming Structure for Solid-State Image Sensor
Patent:
5,349,215 →
Application:
08/095,504 →
Ccd Image Sensor
Patent:
5,324,968 →
Application:
08/154,803 →
Motion/Still Electronic Image Sensing Apparatus
Patent:
5,440,343 →
Application:
08/203,237 →
Full Depletion Mode Clocking of Solid-State Image Sensors for Improved Mtf Performance
Patent:
5,703,642 →
Application:
08/316,001 →
Method of Making a Charge Coupled Device with Edge Aligned Implants and Electrodes
Patent:
5,516,716 →
Application:
08/349,120 →
Image Sensor with Improved Output Region for Superior Charge Transfer Characteristics
Patent:
5,514,886 →
Application:
08/374,280 →
Imaging Device Using Asymmetrical Timing for Pixel Summing
Patent:
5,625,414 →
Application:
08/380,486 →
Self-Aligned Lod Antiblooming Structure for Solid-State Imagers
Patent:
5,702,971 →
Application:
08/414,545 →
Solid State Image Sensor with Selectable Resolution
Patent:
5,874,993 →
Application:
08/426,513 →
Smear Correction of Ccd Imager Using Active Pixels
Patent:
5,661,521 →
Application:
08/462,414 →
Image Sensor with Improved Output Region for Superior Charge Transfer Characteristics
Patent:
5,583,071 →
Application:
08/489,599 →
Charge Coupled Device with Edge Aligned Implants
Patent:
5,641,700 →
Application:
08/558,629 →
Ccd Image Sensor
Patent:
6,351,001 →
Application:
08/633,598 →
A Low Capacitance Floating Diffusion Structure for a Solid State Image Sensor
Patent:
5,621,230 →
Application:
08/675,328 →
Self-Aligned Lod Antiblooming Structure for Solid-State Imagers
Patent:
6,051,852 →
Application:
08/891,290 →
Constant Speed, Variable Resolution Two-Phase Ccd
Patent:
6,462,779 →
Application:
09/028,006 →
Digital Camera Incorporating High Frame Rate Mode
Patent:
6,580,457 →
Application:
09/185,038 →
Low Cost Ccd Packaging
Patent:
6,268,231 →
Application:
09/417,747 →
Charge Coupled Image Sensor with U-Shaped Gates
Patent:
6,403,993 →
Application:
09/443,011 →
Process for Charge Coupled Image Sensor with U-Shaped Gates
Patent:
6,300,160 →
Application:
09/443,271 →
Fast Line Dump Structure for Solid State Image Sensor
Patent:
6,507,056 →
Application:
09/533,050 →
Fast-Dump Structure for Full-Frame Image Sensors with Lod Antiblooming Structures
Patent:
6,693,671 →
Application:
09/533,051 →
Method for Reducing Dark Current
Patent:
6,995,795 →
Application:
09/660,105 →
Optical Test Structure for Measuring Charge-Transfer Efficiency
Image Sensor Having a Capacitance Control Gate for Improved Gain Control and Eliminating Undesired Capacitance
Patent:
6,590,238 →
Application:
10/074,519 →
Solid-State Image Pickup Device Driving Method and Image Capturing Apparatus for Outputting High-Resolution Signals for Still Images and Moving Images of Improved Quality at a High Frame Rate
Interlined Charge-Coupled Device Having an Extended Dynamic Range
Reset Driver Circuit Disposed on the Same Substrate as the Image Sensor
Apparatus and Method for Measuring Digital Imager, Package and Wafer Bow and Deviation from Flatness
Accumulation Mode Clocking of a Charge-Coupled Device
Patent:
6,586,784 →
Application:
10/263,169 →
Ccd Having Improved Flushing by Reducing Power Consumption and Creating a Uniform Dark Field While Maintaining Low Dark Current
Method for Reducing Shutter Latency While Maintaining Low Dark Current in an Imager and Minimizing Energy Consumption
Fast Line Dump Structure for Solid State Image Sensor
Multiple Read Photodiode
Method for Creating a Lateral Overflow Drain, Anti-Blooming Structure in a Charge Coupled Device
Patent:
6,794,219 →
Application:
10/628,184 →
Interline Ccd Implementation of Hybrid Two Color Per Pixel Architecture
High Photosensitivity Cmos Image Sensor Pixel Architecture
Image Sensor for Still or Video Photography
Lightshield Architecture for Interline Transfer Image Sensors
Image Sensor with Charge Multiplication
Charge-Coupled Devices Having Efficient Charge Transfer Rates
Patent:
7,015,520 →
Application:
10/964,101 →
Image Sensor for Still or Video Photography
Charge-Coupled Device Having Mulitple Readout Paths for Multiple Outputs
Fast Flush Structure for Solid-State Image Sensors
Image Sensor for Still or Video Photography
Ccd with Improved Charge Transfer
Ccd with Improved Charge Transfer
Full Frame Ito Pixel with Improved Optical Symmetry
Charge Summing in Multiple Output Charge-Coupled Devices in an Image Sensor
Lightshield Architecture for Interline Transfer Image Sensors
Image Sensor with Variable Resolution and Sensitivity
Image Sensor for Still or Video Photography
System and Method for Draining Residual Charge from Charge-Coupled Device (Ccd) Shift Registers in Image Sensors Having Reset Drains
Image Sensor Clocking Method
Interline Ccd Implementation of Hybrid Two Color Per Pixel Architecture
Interline Ccd Implementation of Hybrid Two Color Per Pixel Architecture
Interline Ccd Implementation of Hybrid Two Color Per Pixel Architecture
Method of Improving Solid-State Image Sensor Sensitivity
Charge-Coupled Device Image Sensor with Vertical Binning of Same-Color Pixels
Charge-Coupled Device Image Sensor with Efficient Binning of Same-Color Pixels
Image Sensor with Charge Multiplication
Ccd Image Sensors Having Multiple Lateral Overflow Drain Regions for a Horizontal Shift Register
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Methods for Capturing and Reading Out Images from an Image Sensor
Ccd Image Sensors Having Multiple Lateral Overflow Drain Regions for a Horizontal Shift Register
Lateral Overflow Drain and Channel Stop Regions in Image Sensors
A Method of Forming Lateral Overflow Drain and Channel Stop Regions in Image Sensors
Image Sensor for Still or Video Photography
Multliple Output Charge-Coupled Devices
Multiple Output Charge-Coupled Devices
Electronic Shutter Control in Image Sensors
Electronic Shutter Control in Image Sensors
Electronic Shutter Control in Image Sensors
Controlling Electronic Shutter in Image Sensors
Ccd Sensors with Multiple Contact Patterns
Ccd Sensors with Multiple Contact Patterns
Ccd Sensors with Multiple Contact Patterns
Ccd Sensors with Multiple Contact Patterns
Image Sensor with Charge Multiplication
Methods for Processing an Image Captured by an Image Sensor Having Multiple Output Channels
Method of Producing an Image with Pixel Signals Produced by an Image Sensor That Includes Multiple Output Channels
Method of Producing an Image Sensor Having Multiple Output Channels
Image Sensor with Charge Multiplication
Methods for Gettering in Semiconductor Substrate
Patent:
8,133,769 →
Application:
12/971,637 →
Method for Producing a Linear Image Sensor Having Multiple Outputs
Clock Driver for a Capacitance Clock Input
Linear Image Sensor with Multiple Outputs
Methods for Producing Image Sensors Having Multi-Purpose Architecture
Multi-Purpose Architecture for Ccd Image Sensors
Multi-Purpose Architecture for Ccd Image Sensors
Identification of Dies on a Semiconductor Wafer
Identification of Dies on a Semiconductor Wafer
Image Sensor with Controllable Vertically Integrated Photodetectors
Image Sensor with Controllable Vertically Integrated Photodetectors Using a Buried Layer
Image Sensor with Controllable Vertically Integrated Photodetectors
Image Sensor with Controllable Vertically Integrated Photodetectors
Image Sensor with Controllable Vertically Integrated Photodetectors
Patent:
8,339,494 →
Application:
13/193,722 →
Image Sensor with Controllable Vertically Integrated Photodetectors
Stitching Methods Using Multiple Microlithographic Expose Tools
Stitching Methods Using Multiple Microlithographic Expose Tools
Device Identification and Temperature Sensor Circuit
Device Identification and Temperature Sensor Circuit
Multiple Clocking Modes for a Ccd Imager
Ccd Image Sensor Having Multiple Clocking Modes
Charge Coupled Image Sensor and Method of Operating with Transferring Operation of Charge Packets from Plural Photodetectors to Vertical Ccd Shift Registers (as Amended)
Multiple Clocking Modes for a Ccd Imager
Combined Device Identification and Temperature Measurement
Lateral Overflow Drain and Channel Stop Regions in Image Sensors
Ccd Image Sensors and Methods
Multimode Interline Ccd Imaging Methods
Dark Reference in Ccd Image Sensors
Depleted Charge-Multiplying Ccd Image Sensor
Metal-Strapped Ccd Image Sensors
Charge Sensing in Image Sensors with Output Channel Having Multiple-Gain Output Paths
Time-Delay-And-Integrate Image Sensors Having Variable Integration Times
Time-Delay-And-Integrate Image Sensors Having Variable Integration Times
Time-Delay-And-Integrate Image Sensors Having Variable Integration Times
Time-Delay-And-Integrate Image Sensors Having Variable Integration Times
Image Sensors Having Multiple Row-Specific Integration Times
Application:
13/627,052 →
Publication:
US 2013/0075590
Image Sensors with Multiple Output Structures
Image Sensors with Multiple Output Structures
Method of Producing an Image Sensor Having Multiple Output Channels
Methods for Producing Image Sensors Having Multi- Purpose Architectures
Image Sensor Including Temperature Sensor and Electronic Shutter Function
Image Sensor Including Temperature Sensor and Electronic Shutter Function
Depleted Charge-Multiplying Ccd Image Sensor
Related Assignments
(9)
Other recorded transfers of the patents in this record — the chain of ownership.
Termination and Release of Patent Security Agreement
May 19, 2014
From: PNC BANK, NATIONAL ASSOCIATION
To: TRUESENSE IMAGING, INC.
Reel/Frame 032936/0167 →
Assignment of Assignor's Interest
Aug 11, 2014
From: HAWKINS, GILBERT A; LOSEE, DAVID L
To: EASTMAN KODAK COMPANY
Reel/Frame 033508/0974 →
Assignment of Assignor's Interest
Aug 11, 2014
From: STEVENS, ERIC G
To: EASTMAN KODAK COMPANY
Reel/Frame 033509/0163 →
Assignment of Assignor's Interest
Aug 11, 2014
From: STEVENS, ERIC G; LAVINE, JAMES P
To: EASTMAN KODAK COMPANY
Reel/Frame 033508/0744 →
Assignment of Assignor's Interest
Jan 28, 2015
From: STEVENS, ERIC G; LAVINE, JAMES P; STANCAMPIANO, CHARLES V
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 034827/0370 →
Release of Security Interest
Sep 22, 2015
From: TRUESENSE IMAGING, INC
To: PNC BANK, NATIONAL ASSOCIATION
Reel/Frame 036656/0412 →
Security Interest
Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
Corrective Assignment to Correct the Incorrect Patent Number 5859768 and to Recite Collateral Agent Role of Receiving Party in the Security Interest Previously Recorded on Reel 038620 Frame 0087. Assignor(S) Hereby Confirms the Security Interest.
Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
Release of Security Interest in Patents Recorded at Reel 038620, Frame 0087
Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →