CCD image sensors having multiple lateral overflow drain regions for a horizontal shift register
View Patent ↗A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region. A buffer region of the second conductivity type can be used to electrically connect each overflow drain to the one particular phase of the horizontal CCD channel. Multiple barrier regions are disposed in the layer of semiconductor material, with each barrier region disposed between each overflow drain and the one particular phase electrically connected to the drain.
1. A charge-coupled device (CCD) image sensor comprising:
an array of pixels each comprising a photodetector for conversion of incident light into electrical charge;
electrically connected to the array of pixels, a horizontal CCD channel region comprising a plurality of shift elements for receiving charge from the array of pixels and transferring the charge out of the array for conversion into an image, each shift element comprising a plurality of phases;
a plurality of distinct drains each associated with a different shift element and electrically connected to only one phase thereof;
a barrier region disposed between each drain and the phase to which the drain is connected, said barrier region having a barrier potential such that excess charge in the channel region that exceeds the barrier potential flows over the barrier region and is drained by the drain; and
a buffer region electrically connecting each drain and the phase to which the drain is connected.
2. The CCD image sensor of claim 1 , further comprising a conductive bus electrically connected to all of the distinct drains.
3. The CCD image sensor of claim 2 , wherein the conductive bus comprises a metal.
4. The CCD image sensor of claim 3 , wherein the metal comprises at least one of aluminum or copper.
5. The CCD image sensor of claim 2 , further comprising a source of power supply bias electrically connected to the conductive bus.
6. The CCD image sensor of claim 1 , wherein the barrier potential has a height selected to prevent charge blooming from the phase into a component other than the drain.
7. The CCD image sensor of claim 1 , wherein the buffer region spaces each drain away from the phase to which the drain is connected.
8. The CCD image sensor of claim 1 , further comprising, for transferring charge from the pixels to the horizontal CCD channel region, a plurality of vertical CCD channel regions each electrically connected to (i) a plurality of pixels and (ii) the horizontal CCD channel region.
9. The CCD image sensor of claim 8 , wherein each vertical CCD channel region comprises a plurality of phases, one of the phases being directly connected to the horizontal CCD channel region.
10. The CCD image sensor of claim 9 , wherein, for each of the vertical CCD channel regions, the phase of the vertical CCD channel region directly connected to the horizontal CCD channel region is connected to the phase of the horizontal CCD channel region connected to one of the drains.
11. The CCD image sensor of claim 1 , further comprising, electrically connected to the horizontal CCD channel region, circuitry for conversion of charge received from the horizontal CCD channel region into an image.
12. The CCD image sensor of claim 11 , wherein the circuitry comprises an output amplifier.
13. A charge-coupled device (CCD) image sensor comprising:
an array of pixels each comprising a photodetector for conversion of incident light into electrical charge;
electrically connected to the array of pixels, a horizontal CCD channel region comprising a plurality of shift elements for receiving charge from the array of pixels and transferring the charge out of the array for conversion into an image, each shift element comprising a plurality of phases;
a plurality of distinct drains each associated with a different shift element and electrically connected to only one phase thereof; and
a plurality of distinct barrier regions with each barrier region being disposed between one of the drains and the phase to which the drain is connected, each barrier region having a barrier potential such that excess charge in the channel region that exceeds the barrier potential flows over the barrier region and is drained by the drain.
14. The CCD image sensor of claim 13 , further comprising a conductive bus electrically connected to all of the distinct drains.
15. The CCD image sensor of claim 14 , wherein the conductive bus comprises a metal.
16. The CCD image sensor of claim 15 , wherein the metal comprises at least one of aluminum or copper.
17. The CCD image sensor of claim 14 , further comprising a source of power supply bias electrically connected to the conductive bus.
18. The CCD image sensor of claim 13 , wherein the barrier potential has a height selected to prevent charge blooming from the phase into a component other than the drain.
19. The CCD image sensor of claim 13 , further comprising a buffer region electrically connecting each drain and the phase to which the drain is connected.
20. The CCD image sensor of claim 19 wherein the buffer region spaces each drain away from the phase to which the drain is connected.
21. The CCD image sensor of claim 13 , further comprising, for transferring charge from the pixels to the horizontal CCD channel region, a plurality of vertical CCD channel regions each electrically connected to (i) a plurality of pixels and (ii) the horizontal CCD channel region.
22. The CCD image sensor of claim 21 , wherein each vertical CCD channel region comprises a plurality of phases, one of the phases being directly connected to the horizontal CCD channel region.
23. The CCD image sensor of claim 22 , wherein, for each of the vertical CCD channel regions, the phase of the vertical CCD channel region directly connected to the horizontal CCD channel region is connected to the phase of the horizontal CCD channel region connected to one of the drains.
24. The CCD image sensor of claim 13 , further comprising, electrically connected to the horizontal CCD channel region, circuitry for conversion of charge received from the horizontal CCD channel region into an image.
25. The CCD image sensor of claim 24 , wherein the circuitry comprises an output amplifier.