Linear image sensor with multiple outputs
View Patent ↗A Charge-Coupled Device (CCD) image sensor includes a linear array of photodetectors. The photodetectors in the linear array are arranged into distinct sub-arrays with each sub-array including two or more photodetectors. An output channel is connected to each sub-array of photodetectors. Each output channel includes a horizontal CCD shift register and an output structure connected to an end of the horizontal CCD shift register in a linear arrangement with respect to each other. Each successive output channel is disposed on an alternate side of the linear array. Every other output channel is disposed on an alternate side of the linear array. One or more dark reference pixels can be connected to one or more additional shift register elements in the horizontal CCD shift registers.
1. A Charge-Coupled Device (CCD) image sensor, comprising:
a linear array of photodetectors, wherein the linear array of photodetectors includes a plurality of photodetectors arranged into a plurality of sub-arrays disposed along an axis and each sub-array includes two or more photodetectors;
an output channel connected to each sub-array of photodetectors with each output channel including a horizontal shift register and an output structure connected to the horizontal shift register in a linear arrangement such that a path of charge transfer through the horizontal shift register and the output structure is substantially linear, wherein each successive output channel is disposed on an alternate side of the axis and each horizontal shift register includes a plurality of shift register elements with one shift register element associated with each photodetector in a respective sub-array, and wherein one or more additional shift register elements are included in each horizontal shift register; and
a dark reference pixel spaced from the linear array of photodetectors and electrically connected to the one or more additional shift register elements in each horizontal shift register.
2. The CCD image sensor as in claim 1 , wherein at least one of the one or more additional shift register elements of each horizontal shift register is disposed at an end of the horizontal shift register farthest from the output structure.
3. The CCD image sensor as in claim 1 , wherein at least one of the one or more additional shift register elements of each horizontal shift register is disposed at an end of the horizontal shift register immediately adjacent to the output structure.
4. The CCD image sensor as in claim 1 , further comprising a transfer mechanism disposed between each shift register element and respective photodetector.
5. The CCD image sensor as in claim 4 , further comprising another transfer mechanism disposed between each shift register element and respective dark reference pixel.
6. The CCD image sensor as in claim 1 , wherein each output structure includes a charge sensing node.
7. The CCD image sensor as in claim 6 , wherein each output structure further includes an output buffer connected to the charge sensing node.
8. The CCD image sensor as in claim 1 , wherein the dark reference pixel and the sub-array connected to each output channel are disposed on opposite sides of the output channel.
9. The CCD image sensor as in claim 1 , wherein each output channel is disposed between each sub-array and respective dark reference pixel.