Method of forming lateral overflow drain and channel stop regions in image sensors
View Patent ↗A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
1. A method of forming a lateral overflow drain and a channel stop associated with a pixel of an image sensor, the pixel comprising one or more shift elements for the accumulation of charge carriers in response to exposure to light, the method comprising:
forming a first mask layer over a semiconductor layer;
removing a portion of the first mask layer, thereby forming a first opening;
forming a second mask layer over the first mask layer;
removing a portion of the second mask layer to form a second opening disposed within and sharing a boundary with the first opening;
introducing dopants having a first conductivity type into the semiconductor layer through only the second opening, thereby forming a lateral overflow drain for draining excess charge carriers from the one or more shift elements;
removing a remaining portion of the second mask layer; and
after removing the remaining portion of the second mask layer, introducing dopants having a second conductivity type opposite the first conductivity type into the semiconductor layer through the first opening, thereby forming a channel stop for preventing movement of charge carriers from the one or more shift elements into a second pixel adjacent to the pixel,
wherein the lateral overflow drain is disposed within and substantially shares a boundary with the channel stop.
2. The method of claim 1 , further comprising forming a field oxide region over the channel stop and the lateral overflow drain.
3. The method of claim 1 , wherein the channel stop is formed before the second opening is formed.
4. The method of claim 1 , wherein the lateral overflow drain is formed before the channel stop is formed.
5. The method of claim 1 , wherein at least one of (i) the dopants having the first conductivity type or (ii) the dopants having the second conductivity type are introduced into the semiconductor layer through an insulating layer disposed over the semiconductor layer.
6. The method of claim 1 , wherein the semiconductor layer comprises a semiconductor-based substrate.
7. The method of claim 1 , wherein the first mask layer comprises a hard mask.
8. The method of claim 7 , wherein the first mask layer comprises at least one of an oxide layer or a nitride layer.
9. The method of claim 1 , wherein the first mask layer comprises photoresist.
10. The method of claim 1 , wherein the second mask layer comprises photoresist.
11. The method of claim 1 , wherein a width of the channel stop is greater than a width of the lateral overflow drain.
12. A method of forming a lateral overflow drain and a channel stop associated with a pixel of an image sensor, the pixel comprising one or more shift elements for the accumulation of charge carriers in response to exposure to light, the method comprising:
forming a first mask layer over a semiconductor layer;
removing a portion of the first mask layer, thereby forming a first opening;
forming a second mask layer over the first mask layer;
removing a portion of the second mask layer to form a second opening disposed within and sharing a boundary with the first opening;
introducing dopants having a first conductivity type into the semiconductor layer through only the second opening, thereby forming a lateral overflow drain for draining excess charge carriers from the one or more shift elements; and
introducing dopants having a second conductivity type opposite the first conductivity type into the semiconductor layer through the first opening, thereby forming a channel stop for preventing movement of charge carriers from the one or more shift elements into a second pixel adjacent to the pixel,
wherein (i) the lateral overflow drain is disposed within and substantially shares a boundary with the channel stop and (ii) the lateral overflow drain is formed before the channel stop is formed.
13. The method of claim 12 , further comprising forming a field oxide region over the channel stop and the lateral overflow drain.
14. The method of claim 12 , wherein at least one of (i) the dopants having the first conductivity type or (ii) the dopants having the second conductivity type are introduced into the semiconductor layer through an insulating layer disposed over the semiconductor layer.
15. The method of claim 12 , wherein the semiconductor layer comprises a semiconductor-based substrate.
16. The method of claim 12 , wherein the first mask layer comprises a hard mask.
17. The method of claim 16 , wherein the first mask layer comprises at least one of an oxide layer or a nitride layer.
18. The method of claim 12 , wherein the first mask layer comprises photoresist.
19. The method of claim 12 , wherein the second mask layer comprises photoresist.
20. The method of claim 12 , wherein a width of the channel stop is greater than a width of the lateral overflow drain.