Charge coupled image sensor and method of operating with transferring operation of charge packets from plural photodetectors to vertical CCD shift registers (as amended)
View Patent ↗A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.
1. A method for transferring charge packets from a plurality of photodetectors to vertical CCD shift registers in a CCD image sensor, wherein a plurality of gate electrodes are disposed over the vertical CCD shift registers and the plurality of gate electrodes are divided into distinct repeating groups of gate electrodes, the method comprising:
applying at a first time step an intermediate clock signal having a first voltage level to a fraction of the gate electrodes in each distinct repeating group of gate electrodes; and
transferring charge packets from a fraction of the photodetectors to respective vertical CCD shift registers by applying at a second time step a transfer clock signal having a different second voltage level to a fraction of the gate electrodes clocked by the intermediate clock signal at the first time step and applying an accumulation clock signal having a different third voltage level to the remaining portion of the gate electrodes clocked by the intermediate clock signal at the first time step such that a voltage transition on the gate electrodes clocked by the accumulation clock signal substantially compensates a voltage transition on the gate electrodes clocked by the transfer clock signal.
2. The method as in claim 1 , further comprising transferring charge packets from another fraction of the photodetectors to respective vertical CCD shift registers by applying at a third time step a transfer clock signal to a fraction of the gate electrodes clocked by the accumulation clock signal and applying the accumulation clock signal to the fraction of the gate electrodes clocked by the transfer clock signal at the second time step such that a voltage transition on the portion of the gate electrodes clocked by the accumulation clock signal substantially compensates a voltage transition on the portion of the gate electrodes clocked by the transfer clock signal.
3. The method as in claim 1 , further comprising transitioning a voltage level applied to a substrate from a first voltage level to a second voltage level substantially simultaneously with the application of the intermediate clock signal at the first time step.
4. The method as in claim 3 , further comprising transitioning the voltage level applied to a substrate from the second voltage level to the first voltage level substantially simultaneously with the application of the transfer clock signal at the second time step.
5. A method for operating a charge-coupled device (CCD) image sensor adapted to operate in a charge transfer mode and in an accumulation mode, wherein the CCD image sensor includes a plurality of vertical CCD shift registers and a plurality of gate electrodes disposed over the vertical CCD shift registers and the plurality of gate electrodes are divided into distinct groups of gate electrodes, the method comprising:
in an initial charge transfer phase of the charge transfer mode,
applying at a first time step an intermediate clock signal to a fraction of the gate electrodes in each distinct group of gate electrodes while substantially simultaneously applying an accumulation clock signal to the remaining gate electrodes in each distinct group of gate electrodes, and
applying at a second time step a transfer clock signal to at least one of the gate electrodes in each distinct group of gate electrodes clocked by the intermediate clock signal at the first time step while substantially simultaneously applying the accumulation clock signal to the remaining gate electrodes in each distinct group of gate electrodes clocked by the intermediate clock signal at the first time step, wherein a voltage transition of the accumulation clock signal applied to the remaining gate electrodes in each distinct group of gate electrodes compensates for a voltage transition of the transfer clock signal applied to at least one of the gate electrodes in each distinct group of gate electrodes; and
in a final charge transfer phase of the charge transfer mode, at each subsequent time step applying the transfer clock signal successively to a different fraction of the gate electrodes in each distinct group of gate electrodes while substantially simultaneously applying the accumulation clock signal to each gate electrode clocked by the transfer clock signal at the previous time step and maintaining the accumulation clock signal on the remaining gate electrodes in each distinct group of gate electrodes, wherein a voltage transition of the accumulation clock signal applied to each gate electrode clocked by the transfer clock signal at the previous time step compensates a voltage transition of the transfer clock signal.
6. The method as in claim 5 , further comprising in the accumulation mode, applying an accumulation clock signal to all of the gate electrodes.
7. The method as in claim 5 , further comprising transitioning a voltage level applied to a substrate from a first voltage level to a second voltage level substantially simultaneously with the application of the intermediate clock signal at the first time step.
8. The method as in claim 7 , further comprising transitioning the voltage level applied to a substrate from the second voltage level to the first voltage level substantially simultaneously with the application of the transfer clock signal at the second time step.
9. The method as in claim 8 , further comprising in the accumulation mode, applying an accumulation clock signal to all of the gate electrodes.
10. The method as in claim 5 , wherein the CCD image sensor is further adapted to operate in a charge shifting mode.
11. The method as in claim 10 , further comprising:
in an initial charge shifting phase of the charge shifting mode, applying a depletion clock signal to one gate electrode in each distinct group of gate electrodes while substantially simultaneously applying a compensation clock signal to the remaining gate electrodes in each distinct group of gate electrodes, wherein a collective voltage transition of the compensation clock signal on the remaining gate electrodes in each distinct group of gate electrodes compensates for a voltage transition of the depletion clock signal on the one gate electrode in each distinct group of gate electrodes; and
in a final charge shifting phase of the charge shifting mode, at each subsequent time step applying the depletion clock signal successively to a different one gate electrode in each distinct group of gate electrodes while substantially simultaneously applying the compensation clock signal to the gate electrode clocked by the depletion clock signal at the previous clock signal and maintaining the compensation clock signal on the remaining gate electrodes in each distinct group of gate electrodes, wherein a voltage transition of the compensation clock signal on the gate electrode previously clocked by the depletion clock signal substantially compensates for a voltage transition of the depletion clock signal on each different one gate electrode in each distinct group of gate electrodes.
12. The method as in claim 11 , further comprising in the accumulation mode, applying an accumulation clock signal to all of the gate electrodes.