Patent Assignment
Reel/Frame 027354/0722
Security Agreement
Recorded: 2011-12-09
Received: 2011-12-09
Pages: 44
Assignor
TRUESENSE IMAGING, INC.
Executed: 2011-12-07
Assignee
PNC BANK, NATIONAL ASSOCIATION
2 NORTH LAKE AVENUE, SUITE 440, PASADENA, CA, 91101, UNITED STATES
Covered Properties
(100)
Image Sensor with Pixel Integration Start Mask
Application:
61/540,107 →
Multiple Gain Charge Sensing
Application:
61/539,092 →
Depleted Charge Multiplying Ccd Image Sensor
Application:
61/539,123 →
Ccd with Improved Dark Reference
Application:
61/539,099 →
STRUCTURE FOR FASTER CLOCKING OF INTERLINE CCDs
Application:
61/539,088 →
Multiple Clocking Modes for a Ccd Imager
Application:
13/241,558 →
Multiple Clocking Modes for a Ccd Imager
Application:
13/241,500 →
Charge Coupled Image Sensor and Method of Operating with Transferring Operation of Charge Packets from Plural Photodetectors to Vertical Ccd Shift Registers (as Amended)
Application:
13/241,547 →
Ccd Image Sensor Having Multiple Clocking Modes
Application:
13/241,526 →
Device Identification and Temperature Sensor Circuit
Application:
13/238,010 →
Device Identification and Temperature Sensor Circuit
Application:
13/238,003 →
Device Identification and Temperature Sensor Circuit
Application:
61/529,287 →
Device Identification and Temperature Sensor Circuit
Application:
61/529,288 →
Stitching Methods Using Multiple Microlithographic Expose Tools
Application:
13/196,197 →
Stitching Methods Using Multiple Microlithographic Expose Tools
Application:
13/196,163 →
Image Sensor with Controllable Vertically Integrated Photodetectors
Application:
13/193,722 →
Image Sensor with Controllable Vertically Integrated Photodetectors
Application:
13/193,677 →
Image Sensor with Controllable Vertically Integrated Photodetectors
Application:
13/193,664 →
Image Sensor with Controllable Vertically Integrated Photodetectors
Application:
13/193,745 →
Image Sensor with Controllable Vertically Integrated Photodetectors
Application:
13/193,714 →
Image Sensor with Controllable Vertically Integrated Photodetectors Using a Buried Layer
Application:
13/193,667 →
Identification of Dies on a Semiconductor Wafer
Application:
13/160,885 →
Identification of Dies on a Semiconductor Wafer
Application:
13/160,901 →
Multi-Purpose Architecture for Ccd Image Sensors
Application:
13/115,242 →
Methods for Producing Image Sensors Having Multi-Purpose Architecture
Application:
13/115,235 →
Multi-Purpose Architecture for Ccd Image Sensors
Application:
13/115,244 →
Ccd Image Sensor
Application:
61/480,390 →
Linear Image Sensor with Multiple Outputs
Application:
13/044,583 →
Linear Image Sensor with Multiple Outputs
Application:
13/044,585 →
Clock Driver for a Capacitance Clock Input
Application:
13/043,809 →
Method for Producing a Linear Image Sensor Having Multiple Outputs
Application:
12/971,743 →
Methods for Gettering in Semiconductor Substrate
Application:
12/971,637 →
Method of Producing an Image with Pixel Signals Produced by an Image Sensor That Includes Multiple Output Channels
Application:
12/967,326 →
Methods for Processing an Image Captured by an Image Sensor Having Multiple Output Channels
Application:
12/967,311 →
Method of Producing an Image Sensor Having Multiple Output Channels
Application:
12/967,341 →
Image Sensor with Charge Multiplication
Application:
12/967,428 →
Image Sensor with Charge Multiplication
Application:
12/967,299 →
Ccd Sensors with Multiple Contact Patterns
Application:
12/845,791 →
Ccd Sensors with Multiple Contact Patterns
Application:
12/845,825 →
Ccd Sensors with Multiple Contact Patterns
Application:
12/845,837 →
Ccd Sensors with Multiple Contact Patterns
Application:
12/845,796 →
Electronic Shutter Control in Image Sensors
Application:
12/770,811 →
Controlling Electronic Shutter in Image Sensors
Application:
12/770,826 →
Electronic Shutter Control in Image Sensors
Application:
12/770,806 →
Electronic Shutter Control in Image Sensors
Application:
12/770,818 →
Multliple Output Charge-Coupled Devices
Application:
12/716,361 →
Multiple Output Charge-Coupled Devices
Application:
12/716,380 →
Image Sensor for Still or Video Photography
Application:
12/612,950 →
Vertical Stack of Image Sensors with Cutoff Color Filters
Application:
12/611,200 →
Lateral Overflow Drain and Channel Stop Regions in Image Sensors
Application:
12/609,257 →
A Method of Forming Lateral Overflow Drain and Channel Stop Regions in Image Sensors
Application:
12/609,296 →
Ccd Image Sensors Having Multiple Lateral Overflow Drain Regions for a Horizontal Shift Register
Application:
12/609,029 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,027 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,062 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,073 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/569,993 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,014 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,053 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,017 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,008 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,034 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/569,974 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,048 →
Methods for Capturing and Reading Out Images from an Image Sensor
Application:
12/570,001 →
Ccd Image Sensors with Variable Output Gains in an Output Circuit
Application:
12/568,696 →
Ccd Image Sensors Having Multiple Lateral Overflow Drain Regions for a Horizontal Shift Register
Application:
12/475,825 →
Image Sensor with Charge Multiplication
Application:
12/407,314 →
Charge-Coupled Device Image Sensor with Efficient Binning of Same-Color Pixels
Application:
12/339,114 →
Charge-Coupled Device Image Sensor with Vertical Binning of Same-Color Pixels
Application:
12/255,716 →
Method of Improving Solid-State Image Sensor Sensitivity
Application:
12/235,737 →
Interline Ccd Implementation of Hybrid Two Color Per Pixel Architecture
Application:
12/168,186 →
Interline Ccd Implementation of Hybrid Two Color Per Pixel Architecture
Application:
12/168,191 →
Interline Ccd Implementation of Hybrid Two Color Per Pixel Architecture
Application:
12/168,184 →
Image Sensor Clocking Method
Application:
12/130,107 →
System and Method for Draining Residual Charge from Charge-Coupled Device (Ccd) Shift Registers in Image Sensors Having Reset Drains
Application:
12/118,131 →
Image Sensor for Still or Video Photography
Application:
12/114,869 →
Image Sensor with Variable Resolution and Sensitivity
Application:
11/680,078 →
Lightshield Architecture for Interline Transfer Image Sensors
Application:
11/491,009 →
Charge Summing in Multiple Output Charge-Coupled Devices in an Image Sensor
Application:
11/490,383 →
Full Frame Ito Pixel with Improved Optical Symmetry
Application:
11/475,463 →
Ccd with Improved Charge Transfer
Application:
11/437,536 →
Ccd with Improved Charge Transfer
Application:
11/412,034 →
Image Sensor for Still or Video Photography
Application:
11/386,929 →
Fast Flush Structure for Solid-State Image Sensors
Application:
11/052,347 →
Charge-Coupled Device Having Mulitple Readout Paths for Multiple Outputs
Application:
11/048,467 →
Image Sensor for Still or Video Photography
Application:
11/009,566 →
Charge-Coupled Devices Having Efficient Charge Transfer Rates
Application:
10/964,101 →
Image Sensor with Charge Multiplication
Application:
10/939,140 →
Lightshield Architecture for Interline Transfer Image Sensors
Application:
10/872,607 →
Image Sensor for Still or Video Photography
Application:
10/833,917 →
Interline Ccd Implementation of Hybrid Two Color Per Pixel Architecture
Application:
10/665,035 →
Method for Creating a Lateral Overflow Drain, Anti-Blooming Structure in a Charge Coupled Device
Application:
10/628,184 →
Multiple Read Photodiode
Application:
10/460,604 →
Fast Line Dump Structure for Solid State Image Sensor
Application:
10/293,672 →
Ccd Having Improved Flushing by Reducing Power Consumption and Creating a Uniform Dark Field While Maintaining Low Dark Current
Application:
10/268,362 →
Method for Reducing Shutter Latency While Maintaining Low Dark Current in an Imager and Minimizing Energy Consumption
Application:
10/268,449 →
Accumulation Mode Clocking of a Charge-Coupled Device
Application:
10/263,169 →
Apparatus and Method for Measuring Digital Imager, Package and Wafer Bow and Deviation from Flatness
Application:
10/163,519 →
Reset Driver Circuit Disposed on the Same Substrate as the Image Sensor
Application:
10/116,478 →
Interlined Charge-Coupled Device Having an Extended Dynamic Range
Application:
10/098,859 →