Granted Patent B2

US 8,415,813 · App. 13/160,885 · Granted Apr 9, 2013

Abstract

Claims (9)

1. A semiconductor die fabricated in a particular location on a semiconductor wafer (i) relative to a particular wafer edge and (ii) within a wafer pattern of locations of dies fabricated on the semiconductor wafer, the semiconductor die comprising;

a semiconductor device; and

a die identification region adjacent to the semiconductor device, wherein the die identification region comprises (i) a wafer indicator indicating an orientation of the wafer pattern relative to the particular wafer edge, (ii) a pattern of die locations that correspond to locations of dies within the wafer pattern, and (iii) a die identification marker, provided in the pattern of die locations, identifying the particular location of the semiconductor die within the wafer pattern,

wherein the wafer indicator and the die identification marker are sufficient to identify the particular location, relative to the particular wafer edge, in which the semiconductor die was fabricated.

2. The semiconductor die as in claim 1 , wherein the die identification region comprises:

a pattern layer patterned to provide the pattern of die locations and the wafer indicator; and

a marker layer disposed over the pattern layer and patterned to provide the die identification marker in the die identification region.

3. The semiconductor die as in claim 2 , wherein the pattern layer comprises a metal layer and the marker layer comprises a passivation layer.

4. The semiconductor die as in claim 2 , wherein the die identification marker comprises an opening in the marker layer that extends to a surface of the pattern layer.

Assignments (10)