Image sensor including temperature sensor and electronic shutter function

1. An image sensor comprising:

a substrate having a first conductivity type;

a first well in the substrate and having an opposite conductivity type and doped with opposite conductivity type dopant at a first dosage at a first implantation energy;

a second well in the first well and having the opposite conductivity type and doped with opposite conductivity type dopant at a second dosage higher than the first dosage;

a first region in the second well and having the opposite conductivity type and doped with opposite conductivity type dopant at a second implantation energy higher than the first implantation energy;

a second region in the first region and having the first conductivity type and doped with first conductivity type dopant at a third dosage higher than the second dosage at the first implantation energy;

a third region in the second well adjacent the first region and having the opposite conductivity type and doped with opposite conductivity type dopant at the third dosage at the first implantation energy

a temperature sensor for measuring temperature measurements of the image sensor and disposed between the second region and the third region and connected to each of the second region and the third region; and

a third well having the first conductivity type in the first well and adjacent the second well.

2. The image sensor of claim 1 , wherein the temperature sensor is a diode.

3. The image sensor of claim 1 wherein the first region prevents substrate punch-through when an electronic shutter pulse is applied to the substrate.

4. The image sensor of claim 1 , wherein said third well is doped with first conductivity type dopant at the first dosage at the first implantation energy.

5. The image sensor of claim 1 , further comprising a fourth region and having the first conductivity type in the substrate, adjacent the first well and doped with first conductivity type dopant at the third dosage at the first implantation energy.

6. The image sensor of claim 2 , wherein a cathode of said diode is connected to a first bond pad for a reading component and an anode of said diode is connected to ground.

7. The image sensor of claim 6 , wherein the cathode is connected to the first bond pad through the second region and the anode is connected to ground through the third region.

8. The image sensor of claim 5 wherein a second bond pad is connected to the fourth region.

9. The image sensor of claim 1 wherein the first conductivity type is n-type and the opposite conductivity type is p-type.

10. An image capture device comprising:

an image sensor including a substrate having a first conductivity type, a first well in the substrate and having an opposite conductivity type and doped with opposite conductivity type dopant at a first dosage at a first implantation energy, a second well in the first well and having the opposite conductivity type and doped with opposite conductivity type dopant at a second dosage higher than the first dosage, a first region in the second well and having the opposite conductivity type and doped with opposite conductivity type dopant at a second implantation energy higher than the first implantation energy, a second region in the first region and having the first conductivity type and doped with first conductivity type dopant at a third dosage higher than the second dosage at the first implantation energy, a third region in the second well adjacent the first region and having the opposite conductivity type and doped with opposite conductivity type dopant at the third dosage at the first implantation energy;

a temperature sensor for measuring temperature of the image sensor and disposed between the second region and the third region and connected to each of the second region and the third region;

a timing generator coupled to the image sensor for applying an electronic shutter pulse to the image sensor;

a reading component coupled to the temperature sensor and reading the temperature from the temperature sensor only in the absence of the electronic shutter pulse; and

a processor coupled to the reading component and the timing generator and configured to instruct the timing generator to apply the electronic shutter pulse to the image sensor and to disable the reading of the temperature by the reading component during the application of the electronic shutter pulse.

11. The device of claim 10 further comprising a cooler for cooling said image sensor based on the temperature measurements by said temperature sensor.

12. The device of claim 10 wherein the temperature sensor is a diode.

13. The device of claim 12 wherein a cathode of said diode is connected to said reading component and an anode of said diode is connected to ground.

14. The device of claim 12 wherein a cathode of said diode is connected to said reading component through the second region and an anode of said diode is connected to ground through the third region.

15. The device of claim 10 wherein said reading component is an analog-to-digital converter.

16. The device of claim 10 wherein the first conductivity type is n-type and the opposite conductivity type is p-type.

17. A method of making an image sensor comprising:

providing a substrate having a first conductivity type;

doping an opposite conductivity type dopant at a first dosage at a first implantation energy to form a first well having an opposite conductivity type in the substrate;

doping an opposite conductivity type dopant at a second dosage higher than the first dosage to form a second well having the opposite conductivity type in the first well;

doping an opposite conductivity type dopant at a second implantation energy higher than the first implantation energy to form a first region having the opposite conductivity type in the second well;

doping a first conductivity type dopant at a third dosage higher than the second dosage at the first implantation energy to form a second region having the first conductivity type in the first region;

doping an opposite conductivity type dopant at the third dosage at the first implantation energy to form a third region having the opposite conductivity type in the second well and adjacent the first region;

doping a first conductivity type dopant to form a third well having the first conductivity type in the first well and adjacent the second well;

disposing a temperature sensor for measuring temperature measurements of the image sensor between the second region and the third region; and

connecting the temperature sensor to each of the second region and the third region.

18. The method of claim 17 , wherein the temperature sensor is a diode.

19. The method of claim 17 wherein the first region prevents substrate punch-through when an electronic shutter pulse is applied to the substrate.

20. The method of claim 17 , wherein doping the first conductivity type dopant to form the third well comprises doping the first conductivity type dopant at the first dosage at the first implantation energy to form the third well.

21. The method of claim 17 , further comprising doping a first conductivity type dopant at the third dosage at the first implantation energy to form a fourth region having the first conductivity type in the substrate and adjacent the first well.

22. The method of claim 18 , further comprising connecting a cathode of said diode to a first bond pad for a reading component and connecting an anode of said diode to ground.

23. The method of claim 22 , wherein the cathode is connected to the first bond pad through the second region and the anode is connected to ground through the third region.

24. The method of claim 17 , further comprising connecting a second bond pad to the fourth region.

25. The method of claim 17 , wherein the first conductivity type is n-type and the opposite conductivity type is p-type.