Scattering bar OPC application method for sub-half wavelength lithography patterning
A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
1. A method of forming a mask comprising features to be imaged and optical proximity correction features; said method comprising the steps of:
forming a first assist feature extending in a first direction;
forming a second assist feature extending in a second direction, said first direction and said second direction being orthogonal to one another; and
forming a chamfer assist feature which connects said first assist feature to said second assist feature, said chamfer assist feature disposed at an angle relative to both said first assist feature and said second assist feature.
2. The method of forming a mask according to claim 1 , wherein said chamfer assist feature has a primary axis which is disposed at approximately a 45° angle relative to a primary axis of said first assist feature, and a primary axis of said second assist feature.
3. The method of forming a mask according to claim 1 , wherein said chamfer assist feature has a triangular configuration.
4. The method of forming a mask according to claim 3 , wherein said chamfer assist feature has a configuration forming a right-triangle having approximately angles of 45°, 45° and 90°.
5. The method of forming a mask according to claim 1 , wherein said chamfer assist feature has a trapezoidal configuration.
6. A method of forming a mask comprising features to be imaged and optical proximity correction features; said method comprising the steps of:
forming a plurality of first assist features, each of which extends in a first direction;
forming a plurality of second assist features, each of which extends in a second direction, said first direction and said second direction being orthogonal to one another; and
forming a plurality of chamfer assist features, each of which connects one of said first assist features to one of said plurality of second assist features, each of said chamfer assist features disposed at an angle relative to both said plurality of first assist features and said plurality of second assist features.
7. The method of forming a mask according to claim 6 , wherein at least a portion of said plurality of first assist features, at least a portion of said plurality of second assist features, and at least a portion of said chamfer assist features are arranged so as to substantially surround a feature to be imaged.
8. The method of forming a mask according to claim 6 , wherein each of said plurality of chamfer assist features has a primary axis which is disposed at approximately a 45° angle relative to a primary axis of each of said plurality of first assist features, and a primary axis of each of said plurality of second assist features.
9. The method of forming a mask according to claim 6 , wherein each of said plurality of chamfer assist features have at least of one a triangular configuration or a trapezoidal configuration.
10. A program product, comprising executable code transportable by at least one machine readable medium, wherein execution of the code by at least one programmable computer causes the at least one programmable computer to perform a sequence of steps for forming a mask for optically transferring a pattern formed in said mask onto a substrate, said steps comprising:
forming a first assist feature extending in a first direction;
forming a second assist feature extending in a second direction, said first direction and said second direction being orthogonal to one another; and
forming a chamfer assist feature which connects said first assist feature to said second assist feature, said chamfer assist feature disposed at an angle relative to both said first assist feature and said second assist feature.
11. A program product according to claim 10 , wherein said chamfer assist feature has a primary axis which is disposed at approximately a 45° angle relative to a primary axis of said first assist feature, and a primary axis of said second assist feature.
12. A program product according to claim 10 , wherein said chamfer assist feature has a triangular configuration.
13. A program product according to claim 11 , wherein said chamfer assist feature has a configuration forming a right-triangle having approximately angles of 45°, 45° and 90°.
14. A program product according to claim 12 , wherein said chamfer assist feature has a trapezoidal configuration.
15. A program product, comprising executable code transportable by at least one machine readable medium, wherein execution of the code by at least one programmable computer causes the at least one programmable computer to perform a sequence of steps for forming a mask for optically transferring a pattern formed in said mask onto a substrate, said steps comprising:
forming a plurality of first assist features, each of which extends in a first direction;
forming a plurality of second assist features, each of which extends in a second direction, said first direction and said second direction being orthogonal to one another; and
forming a plurality of chamfer assist features, each of which connects one of said first assist features to one of said plurality of second assist features, each of said chamfer assist features disposed at an angle relative to both said plurality of first assist features and said plurality of second assist features,
wherein at least a portion of said plurality of first assist features, at least a portion of said plurality of second assist features, and at least a portion of said chamfer assist features are arranged so as to substantially surround a feature to be imaged.