Semiconductor structures having through-holes sealed with feed-through metalization
View Patent ↗Semiconductor structures with one or more through-holes are disclosed. A feed-through metallization process may be used to seal the through-holes hermetically.
1. A semiconductor structure comprising:
a front surface;
a back surface being arranged substantially opposite to said front surface;
a conductive contact formed on an upper part of the structure;
a conductive contact formed on a lower part of the structure; and
at least one feed-through interconnect that includes feed-through metallization to provide a conductive path between the conductive contact formed on the lower part of the structure, wherein each feed-through interconnect includes a plurality of sealed through-holes and the conductive contact formed on the upper part of the structure.
2. A semiconductor structure according to claim 1 wherein for each feed-through interconnect, the feed-through metallizations of the through-holes are electrically connected to each other within the lower part of the structure and the upper part of the structure.
3. A semiconductor structure according to claim 1 wherein at least one of the through-holes is hermetically sealed.
4. A semiconductor structure according to claim 3 wherein the hermetic sealing is provided by the feed-through metallization.
5. A semiconductor structure according to claim 1 wherein the through-holes are hermetically sealed.
6. The semiconductor structure of claim 1 wherein the sealed through-holes have a tapered shape.
7. An optoelectronic assembly structure comprising:
a semiconductor base having a major surface;
an optical waveguide integrally formed along the major surface;
an optoelectronic chip optically coupled to the waveguide;
a semiconductor lid sealed to the base and forming an enclosure that covers the chip, the lid comprising:
a front surface;
a back surface arranged substantially opposite said front surface; and
at least one feed-through interconnect each of which comprises a plurality of through-hole connections.
8. An optoelectronic assembly structure according to claim 7 wherein at least one through-hole is provided with feed-through metallization to provide a current path through the lid to the optoelectronic chip.
9. An optoelectronic assembly structure according to claim 8 wherein the optoelectronic chip comprises a laser.
10. An optoelectronic assembly structure according to claim 7 wherein the through-hole connections provide a hermetic seal for the optoelectronic chip.