IP Library Granted Patent US 7,329,475
Granted Patent B2
US 7,329,475 · App. 10/896,968 · Granted Feb 12, 2008

Method of selecting photomask blank substrates

Assignees: Shin-Estu Chemical Co., Ltd.; Kabushiki Kaisha Toshiba; Nikon Corporation
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Quick Facts
Patent No.
US 7,329,475
App. No.
10/896,968
Granted
Feb 12, 2008
Kind
B2
Abstract

Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is νoτ μoρε τηαν 0.5 μm is selected.

Claims (6)

1. A method of selecting photomask blank substrates which are quadrangular and have a length on each side of at least 6 inches, provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the method comprising the steps of:

measuring the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions at intervals of 0.05 to 0.35 mm in horizontal and vertical directions, and

selecting, as a substrate having an acceptable surface shape, a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is not more than 0.5 μm.

2. A method of selecting photomask blank substrates which are quadrangular and have a length on each side of at least 6 inches, provided that a quadrangular ring-shaped region extends from 2 mm to 10 mm within each side along an outer periphery on a top surface of a substrate on which a mask pattern is to be formed, the method comprising the steps of:

measuring the height from a least squares plane for the quadrangular ring-shaped region on the substrate top surface to the quadrangular ring-shaped region at intervals of 0.05 to 0.35 mm in horizontal and vertical directions, and

selecting, as a substrate having an acceptable surface shape, a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is not more than 0.5 μm.

Assignments (5)
CHANGE OF NAME Recorded Feb 11, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 059039/0123 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 1, 2022
From: K.K.PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058922/0308 →
MERGER Recorded Jan 20, 2022
From: TOSHIBA MEMORY CORPORATION
To: K.K.PANGEA
Reel/Frame 058788/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043728/0191 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2004
From: NAKATSU, MASAYUKI; NUMANAMI, TSUNEO; MOGI, MASAYUKI; ITOH, MASAMITSU; HAGIWARA, TSUNEYUKI; KONDO, NAOTO
To: SHIN-ETSU CHEMICAL CO., LTD.; KABUSHIKI KAISHA TOSHIBA; NIKON CORPORATION
Reel/Frame 015615/0711 →
Priority Claims (1)
JP 2003-280463 · Jul 25, 2003 · national
Continuity (1)
Related Publication 20050019676A1 · Jan 27, 2005