Temperature sensor for high power very large scale integration circuits
View Patent ↗Disclosed is a temperature sensor for an integrated circuit having at least one field effect transistor (FET) having a polysilicon gate, in which a current and a voltage is supplied to the polysilicon gate, changes in the current and the voltage of the polysilicon gate are monitored, wherein the polysilicon gate of the at least one FET is electrically isolated from other components of the integrated circuit, and the changes in the current or voltage are used to calculate a change in resistance of the polysilicon gate, and the change in resistance of the polysilicon gate is used to calculate a temperature change within the integrated circuit.
1. A temperature sensor for an integrated circuit having at least one field effect transistor (FET), said FET having a gate, comprising means for monitoring changes in the current and the voltage of the gate,
wherein the gate of the at least one FET is electrically isolated from other components of the integrated circuit, and wherein the changes in the current and voltage are used to calculate a change in resistance of the gate, and wherein the change in resistance of the gate is used to calculate a temperature change within the integrated circuit.
2. The temperature sensor of claim 1 , further comprising means for supplying a current and a voltage to the polysilicon gate.
3. The temperature sensor of claim 2 , wherein the resistance of the gate is measured while the other elements of the integrated circuit are in an inactive state to determine a temperature during the inactive state.
4. The temperature sensor of claim 2 , wherein the resistance of the gate is measured while the other elements of the integrated circuit are in an active state to determine a temperature during the active state.
5. The temperature sensor of claim 1 , wherein the temperature sensor is embedded within at least one of an on-chip clock buffer, an IO driver and a wordline driver.
6. The temperature sensor of claim 1 , wherein the temperature sensor is employed in multilevel metallization.
7. The temperature sensor of claim 1 , wherein the temperature sensor is comprised of a multifinger device with different device spacing and separate source-drain connections.
8. The temperature sensor of claim 1 , wherein the temperature sensor is employed in 3-D topology structures.
9. An integrated circuit having an embedded temperature sensor, comprising:
at least one field effect transistor (FET), said FET having a gate that is electrically isolated from other elements of the integrated circuit;
a voltage monitoring point to monitor the voltage of the gate; and
a current monitoring point for monitoring the current through the gate.
10. The temperature sensor of claim 9 , further comprising:
a voltage input point for supplying a voltage to the gate; and
a current input point for supplying a current through the gate.
11. A method for measuring the internal temperature of an integrated circuit having at least one field effect transistor (FET) having a gate, comprising the steps of:
electrically isolating the gate from other elements of the integrated circuit;
measuring the current and voltage of the gate;
calculating the resistance of the gate based on the measured current and voltage; and
calculating the temperature of the gate based on the calculated resistance.
12. The method for measuring the internal temperature of an integrated circuit of claim 11 , wherein a voltage is supplied to the gate and a current is supplied through the gate.
13. The method for measuring the internal temperature of an integrated circuit of claim 11 , wherein lateral heat spreading can be calculated in multifinger devices.
14. A temperature sensor for an integrated circuit having at least one field effect transistor (FET) having a source, a drain and a gate, and having a channel between the source and the drain, comprising means for monitoring changes in sub-threshold leakage currents through the channel,
wherein the temperature is extrapolated from the obtained leakage currents.
15. The temperature sensor of claim 14 , wherein the leakage currents are proportional to
I=I 0 ( e (Vq/kT) −1)
where V is the applied voltage, T is the temperature, q is the electron charge, and I 0 is the saturation current.
16. The temperature sensor of claim 14 , further comprising:
a first source of at least one FET electrically isolated from other components of the integrated circuit;
a first drain of the at least one FET electrically isolated from other components of the integrated circuit;
means for supplying a voltage to at least one of the first source and the first drain; and
means for measuring a current through the channel between the first source and the first drain.
17. The temperature sensor of claim 14 , wherein the temperature sensor is embedded within at least one of an on-chip clock buffer, an IO driver, and a wordline driver.
18. The temperature sensor of claim 14 , wherein the temperature sensor is employed in multilevel metallization.
19. A method for measuring the internal temperature of an integrated circuit having at least one field effect transistor (FET) having a source, a drain and a gate, and having a channel between the source and the drain, comprising the step of monitoring changes in sub-threshold leakage currents through the channel,
wherein the temperature is extrapolated from the obtained leakage currents.
20. The method of claim 19 , wherein the leakage currents are proportional to
I=I 0 ( e (Vq/kT) −1)
where V is the applied voltage, T is the temperature, q is the electron charge, and I 0 is the saturation current.
21. The method of claim 19 , further comprising the steps of:
electrically isolating a first source of at least one FET from other components of the integrated circuit;
electrically isolating a first drain of the at least one FET from other components of the integrated circuit;
supplying a voltage to at least one of the first source and the first drain; and
measuring a current through the channel between the first source and the first drain.
22. A temperature sensor for a multilevel metallization device, comprising means for monitoring changes in the current and the voltage of a metal finger of the multilevel metallization device,
wherein the metal finger of the multilevel metallization device comprises a gate and is electrically isolated from other components of the multilevel metallization device, and wherein the changes in the current and voltage are used to calculate a change in resistance of the metal finger, and wherein the change in resistance of the metal finger is used to calculate a temperature change within the multilevel metallization device.