IP Library Granted Patent US 7,115,865
Granted Patent B2
US 7,115,865 · App. 10/908,953 · Granted Oct 3, 2006

Method of applying micro-protection in defect analysis

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Quick Facts
Patent No.
US 7,115,865
App. No.
10/908,953
Granted
Oct 3, 2006
Kind
B2
Abstract

The present invention discloses a method of applying micro-protection in defect analysis. The method includes providing a substrate having at least one defect thereon, forming the micro-protection on the surface of the defect, confirming the site of the defect, and forming a specimen of the defect by utilizing a focused ion beam microscope.

Claims (34)

1. A method of defect analysis comprising:

providing a substrate, the substrate includes at least a defect thereon;

utilizing at least one microscope for observing the substrate;

creating a reference mark in proximity to the defect;

forming a micro-protection on the surface of the defect;

confirming the site of the defect; and

utilizing a focused ion beam (FIB) microscope to form a specimen of the defect.

2. The method of claim 1 , wherein the substrate is a wafer or a glass substrate.

3. The method of claim 1 , wherein the defect is a surface defect.

4. The method of claim 1 , wherein the microscope is an optical microscope or a scanning electron microscope (SEM), and the specimen is a transmission electron microscope (TEM) specimen or a scanning electron microscope specimen.

5. The method of claim 1 further comprising performing a layer removing step to expose the defect after the reference mark is created.

6. The method of claim 1 further comprising performing a layer removing step to expose the defect before the reference mark is created.

7. The method of claim 1 further comprising determining the location of the reference mark when the site of the defect is confirmed by the focused ion beam microscope, wherein the reference mark comprises a feature, a focused ion beam mark, or a laser mark.

8. The method of claim 1 further comprising utilizing a scanning electron microscope for observing the top-view structure of the defect before the micro-protection is formed on the surface of the defect.

9. The method of claim 1 , wherein the step of forming a micro-protection on the surface of the defect further comprises:

placing a small quantity of transparent material on the surface of the defect; and

solidifying the disposed transparent material.

10. The method of claim 9 , wherein the step of placing the small quantity of transparent material on the surface of the defect is performed by using an optical microscope and a probe of a micromanipulator.

11. The method of claim 9 , wherein the transparent material comprises transparent resin or glue.

12. A method of defect analysis comprising:

providing a substrate, wherein the substrate includes at least a defect thereon;

creating at least one reference mark in proximity to the defect;

forming a micro-protection on the surface of the defect;

utilizing a focused ion beam (FIB) microscope to search the reference mark for confirming the site of the defect; and

forming a specimen of the defect by utilizing the focused ion beam microscope.

13. The method of claim 12 , wherein the substrate is a wafer or a glass substrate, the defect is a surface defect or a bottom layer defect, and the reference mark comprises a feature, a focused ion beam mark, or a laser mark.

14. The method of claim 12 further comprising a layer removing step when the defect is a bottom layer defect and after the reference mark is created.

15. The method of claim 12 further comprising a layer removing step when the defect is a bottom layer defect and before the reference mark is created.

16. The method of claim 12 , wherein the step of forming a micro-protection on the surface of the defect further comprises:

placing a small quantity of transparent material on the surface of the defect; and

solidifying the disposed transparent material.

17. The method of claim 16 , wherein the step of placing the small quantity of transparent material on the surface of the defect is performed by using an optical microscope and a probe of a micromanipulator.

18. The method of claim 16 , wherein the transparent material comprises transparent resin or glue.

19. The method of claim 12 , wherein the specimen is a transmission electron microscope specimen or a scanning electron microscope specimen.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049747/0017 →
CHANGE OF NAME Recorded Jun 28, 2019
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 049629/0267 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2005
From: CHANG, CHING-PIN; SHIH, CHING-CHING; CHEN, TING-WEI
To: POWERCHIP SEMICONDUCTOR CORP.
Reel/Frame 016084/0480 →