Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices
View Patent ↗The present invention facilitates dual bit memory devices and operation of dual bit memory device by providing systems and methods that employ a relatively thin undoped TEOS liner during fabrication, instead of a relatively thick TEOS layer that is conventionally used. Employment of the relatively thin liner facilitates dual bit memory device operation by mitigating charge loss and contact resistance while providing protection against unwanted dopant diffusion. The present invention includes utilizing a relatively thin undoped TEOS liner that is formed on wordlines and portions of a charge trapping dielectric layer. The relatively thin undoped TEOS liner is formed with a thickness of less than about 400 Angstroms so that contact resistance and charge loss are improved and yet providing suitable protection for operation of the device. Additionally, the present invention includes foregoing with an undoped TEOS liner altogether.
1. A method of fabricating a dual bit memory device comprising:
forming a charge trapping dielectric layer on a semiconductor substrate;
depositing a resist layer on the charge trapping dielectric layer;
patterning the resist layer to selectively leave openings in the resist layer;
performing a bitline implant through the openings in the resist layer to form bitlines that operate as acting sources and acting drains;
removing the resist layer;
forming a wordline layer on the charge trapping dielectric layer;
patterning the wordline layer to form wordlines that overlie the bitlines;
forming a relatively thin undoped TEOS liner on the wordlines and the charge trapping dielectric layer;
forming a BPTEOS interlayer dielectric layer on the relatively thin TEOS layer;
forming wordline and bitline contact vias in the BPTEOS interlayer dielectric layer by selectively etching through the BPTEOS interlayer dielectric layer, and the relatively thin TEOS layer;
forming bitline contacts in the bitline vias that contact bitlines and wordline contacts in the wordline vias that contact wordlines.
2. The method of claim 1 , further comprising:
depositing a refractory metal in the wordline and bitline contact vias prior to forming the bitline and wordline contacts;
saliciding the deposited refractory metal in the wordline contact vias to interact with an upper surface of the wordlines to form wordline salicide regions; and
saliciding the deposited refractory metal in the bitline contact vias to interact with an upper surface of the bitlines to form bitline salicide regions.
3. The method of claim 1 , wherein the relatively thin undoped TEOS liner is formed by a low pressure chemical vapor deposition process with TEOS at 700 degrees Celsius.
4. The method of claim 1 , wherein the relatively thin undoped TEOS liner is formed to a thickness of less than 400 Angstroms.
5. The method of claim 1 , wherein the relatively thin undoped TEOS liner is formed to a thickness of less than 200 Angstroms.
6. The method of claim 1 , wherein the relatively thin undoped TEOS liner is formed to a thickness that sufficiently mitigates unwanted dopant diffusion and reduces contact resistance and charge loss.
7. The method of claim 1 , wherein the charge trapping dielectric layer is formed by:
forming a first insulating layer on the semiconductor substrate;
forming a charge trapping layer on the first insulating layer; and
forming a second insulating layer on the charge trapping layer.
8. The method of claim 7 , further comprising repairing the second insulating layer after performing the bitline implant.
9. A method of fabricating a dual bit memory device comprising:
selecting a thickness for a relatively thin undoped TEOS liner according to desired charge loss, desired contact resistance, and device operation;
forming a charge trapping dielectric layer on a semiconductor substrate;
performing a bitline implant to form bitlines in the semiconductor substrate, wherein the bitlines operate as acting sources and acting drains for dual bit operation;
depositing a conductive material over the charge trapping dielectric layer;
patterning the deposited conductive material to form wordlines; and
forming the undoped TEOS liner with the selected thickness on the wordlines and the charge trapping dielectric layer.
10. The method of claim 9 , wherein the selected thickness is less than about 400 Angstroms.
11. The method of claim 9 , wherein the selected thickness is about 0 Angstroms.
12. The method of claim 9 , further comprising forming an interlayer dielectric layer over the device and on the undoped TEOS liner that mitigates shorting between the wordlines and the bitlines.
13. The method of claim 12 , further comprising forming wordline contacts in the interlayer dielectric layer, through a portion of the undoped TEOS liner, and in contact with associated wordlines.
14. The method of claim 12 , further comprising forming bitline contacts in the interlayer dielectric layer, through a portion of the undoped TEOS liner, and in contact with associated bitlines.