IP Library Granted Patent US 7,034,574
Granted Patent B1
US 7,034,574 · App. 10/920,009 · Granted Apr 25, 2006

Low-voltage differential signal (LVDS) transmitter with high signal integrity

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Quick Facts
Patent No.
US 7,034,574
App. No.
10/920,009
Granted
Apr 25, 2006
Kind
B1
Abstract

A differential signal output driver circuit having four switching transistors and having a bias transistor that shields each of the switching transistors from the corresponding output terminal thereby blocking the Miller capacitance of the switching capacitor from generating overshoot or undershoot in the output differential voltage. Also, the output driver circuit may be driven by a differential skew cancellation circuit that generates a balanced differential signal to drive the switching transistors to further improve signal integrity. The signal path for generating each signal in the differential signal goes through a similar structure thereby ensuring similar slew in each differential signal provided to the output driver circuit.

Claims (45)

1. A differential signal output driver circuit comprising:

a first voltage source;

a second voltage source;

a first bias terminal;

a second bias terminal;

a first switching terminal;

a second switching terminal;

a first output terminal;

a second output terminal;

a first switching field effect transistor having a source terminal coupled to the first voltage source, a gate terminal coupled to the second switching terminal, and a drain terminal;

a second switching field effect transistor having a source terminal coupled to the first voltage source, a gate terminal coupled to the first switching terminal, and a drain terminal;

a first bias field effect transistor having a source terminal coupled to the drain terminal of the first switching field effect transistor, a gate terminal coupled to the first bias terminal, and a drain terminal coupled to the first output terminal;

a second bias field effect transistor having a source terminal coupled to the drain terminal of the second switching field effect transistor, a gate terminal coupled to the first bias terminal, and a drain terminal coupled to the second output terminal;

a resistor coupled between the first output terminal and the second output terminal;

a third switching field effect transistor having a source terminal coupled at least indirectly to the second voltage source, a gate terminal coupled to the second switching terminal, and a drain terminal coupled at least indirectly to the drain terminal of the first bias field effect transistor; and

a fourth switching field effect transistor having a source terminal coupled at least indirectly to the second voltage source, a gate terminal coupled to the first switching terminal, and a drain terminal coupled at least indirectly to the drain terminal of the second bias field effect transistor.

2. A differential signal output driver circuit in accordance with claim 1 ,

wherein the first voltage source is configured during operation to supply a higher voltage than the second voltage source,

wherein the first switching field effect transistor, the second switching field effect transistor, the first bias field effect transistor, and the second bias field effect transistor are p-type field effect transistors; and

wherein the third switching field effect transistor and the fourth switching field effect transistor are n-type field effect transistors.

3. A differential signal output driver circuit in accordance with claim 1 ,

wherein the first voltage source is configured during operation to supply a lower voltage than the second voltage source,

wherein the first switching field effect transistor, the second switching field effect transistor, the first bias field effect transistor, and the second bias field effect transistor are n-type field effect transistors; and

wherein the third switching field effect transistor and the fourth switching field effect transistor are p-type field effect transistors.

4. A differential signal output driver circuit in accordance with claim 1 , further comprising the following:

a third bias field effect transistor having a source terminal coupled to the second voltage source, a gate terminal coupled to the second bias terminal, and a drain terminal coupled to the source terminal of the third switching field effect transistor and to the source terminal of the fourth switching field effect transistor.

5. A differential signal output driver circuit in accordance with claim 4 ,

wherein the first voltage source is configured during operation to supply a higher voltage than the second voltage source,

wherein the first switching field effect transistor, the second switching field effect transistor, the first bias field effect transistor, and the second bias field effect transistor are p-type field effect transistors; and

wherein the third switching field effect transistor, the fourth switching field effect transistor, and the third bias field effect transistor are n-type field effect transistors.

6. A differential signal output driver circuit in accordance with claim 4 ,

wherein the first voltage source is configured during operation to supply a lower voltage than the second voltage source,

wherein the first switching field effect transistor, the second switching field effect transistor, the first bias field effect transistor, and the second bias field effect transistor are n-type field effect transistors; and

wherein the third switching field effect transistor, the fourth switching field effect transistor, and the third bias field effect transistor are p-type field effect transistors.

7. A differential signal output driver circuit in accordance with claim 1 , further comprising:

a third bias field effect transistor having a source terminal coupled to the drain terminal of the third switching field effect transistor, a gate terminal coupled to the second bias terminal, and a drain terminal coupled to the drain terminal of the first bias field effect transistor; and

a fourth bias field effect transistor having a source terminal coupled to the drain terminal of the fourth switching field effect transistor, a gate terminal coupled to the second bias terminal, and a drain terminal coupled to the drain terminal of the second bias field effect transistor.

8. A differential signal output driver circuit in accordance with claim 1 , wherein the resistor is a series resistor comprising a first resistor and a second resistor, further comprising:

a common mode voltage terminal coupled between the first and second resistors.

9. A differential signal output driver circuit in accordance with claim 1 , wherein the first voltage source is approximately 3.3 volts and the second voltage source is approximately ground.

10. A differential signal output driver circuit in accordance with claim 1 , wherein the first voltage source is approximately 2.5 volts and the second voltage source is approximately ground.

11. A differential signal output driver circuit in accordance with claim 1 , wherein the first voltage source is approximately ground and the second voltage source is approximately 3.3 volts.

12. A differential signal output driver circuit in accordance with claim 1 , wherein the first voltage source is approximately ground and the second voltage source is approximately 2.5 volts.

13. A differential signal output driver circuit in accordance with claim 1 , further comprising the following:

one or more input stage circuitry configured during operation to generate a differential signal on the first and second switching terminals.

Assignments (10)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
RELEASE OF SECURITY INTEREST Recorded May 6, 2016
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT AND COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038631/0345 →
RELEASE OF SECURITY INTEREST Recorded May 6, 2016
From: JPMORGAN CHASE BANK, N.A. (ON ITS BEHALF AND ON BEHALF OF ITS PREDECESSOR IN INTEREST, CHASE MANHATTAN BANK)
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038632/0074 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
PURCHASE AGREEMENT DATED 28 FEBRUARY 2009 Recorded Sep 25, 2009
From: AMI SEMICONDUCTOR, INC.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 023282/0465 →
SECURITY AGREEMENT Recorded Jun 23, 2008
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; AMIS HOLDINGS, INC.; AMI SEMICONDUCTOR, INC.; AMIS FOREIGN HOLDINGS INC.; AMI ACQUISITION LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 021138/0070 →
PATENT RELEASE Recorded Mar 21, 2008
From: CREDIT SUISSE
To: AMI SEMICONDUCTOR, INC.
Reel/Frame 020679/0505 →
SECURITY INTEREST Recorded Jun 1, 2005
From: AMI SEMICONDUCTOR, INC.
To: CREDIT SUISSE (F/K/A CREDIT SUISEE FIRST BOSTON), AS COLLATERAL AGENT
Reel/Frame 016290/0206 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 17, 2004
From: LI, ZHONGMIN
To: AMI SEMICONDUCTOR,INC.
Reel/Frame 015706/0751 →