Method of detecting misalignment of ion implantation area
View Patent ↗A method of detecting misalignment of ion implantation areas comprises forming at least one standard pattern consisting of a first area and a second area for use in measuring resistance, implanting first and second conduction type impurity ions into the first and second areas, respectively, and measuring a resistance of the standard pattern. The method also includes forming a misalignment inspection pattern consisting of a first area and a second area on a predetermined area within a semiconductor substrate, implanting first and second conduction type impurity ions into the misalignment inspection pattern and active regions on the semiconductor substrate, respectively, and measuring a resistance of the misalignment inspection pattern. The method concludes by comparing the resistance of the standard pattern with the resistance of the misalignment inspection pattern.
1. A method of detecting misalignment of ion implantation areas comprising:
forming a misalignment inspection pattern on a semiconductor substrate, wherein the misalignment inspection pattern have a first area and a second area;
implanting first and second conduction type impurity ions into the misalignment inspection pattern and active regions on the semiconductor substrate, respectively;
measuring a resistance of the misalignment inspection pattern; and
detecting misalignment of ion implantation areas through comparing the resistance of the misalignment pattern with a reference resistance, wherein the reference resistance is made by measuring the resistance of the misalignment pattern in various misalignment case of the ion implantation areas.
2. A method as defined by claim 1 , wherein the center of the misalignment inspection pattern is a boundary between the first area and the second area.
3. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into the whole first area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into the whole second area of the misalignment inspection pattern.
4. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into the whole first area and some part of the second area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into the rest part of the second area of the misalignment inspection pattern.
5. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into the whole first area and some part of the second area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into the whole second area and some part of the first area of the misalignment inspection pattern.
6. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into some part of the first area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into some part of the second area of the misalignment inspection pattern.
7. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into some part of the first area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into the rest part of the first area and the whole second area of the misalignment inspection pattern.
8. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into the whole first area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into some part of the second area of the misalignment inspection pattern.
9. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into the whole first area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into some part of the first area and the whole second area of the misalignment inspection pattern.
10. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into the whole first area and some part of the second area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into the whole second area of the misalignment inspection pattern.
11. A method as defined by claim 1 , wherein the misalignment case of the ion implantation areas is made by implanting the first conduction type impurity ions into some part of the first area of the misalignment inspection pattern and then implanting the second conduction type impurity ions into the whole second area of the misalignment inspection pattern.
12. A method as defined by claim 1 , wherein the first conduction type impurity ions are an n-type if the second conduction type impurity ions are a p-type, and the first conduction type impurity ions are a p-type if the second conduction impurity ions are an n-type.
13. A method as defined by claim 1 , wherein the active regions are classified as a first active region in which first conduction type impurity ions are implanted and a second active region in which second conduction type impurity ions are implanted, and wherein implanting impurity ions into the active regions and the misalignment inspection pattern comprises implanting the first conduction type impurity ions into the first active region and the first area of the misalignment inspection pattern and, then, implanting the second conduction type impurity ions into the second active region and the second area of the misalignment inspection pattern.
14. A method as defined by claim 1 , wherein implanting impurity ions into the active regions on the semiconductor substrate is an ion implantation process for forming wells or source/drain regions.
15. A method as defined by claim 1 , wherein the misalignment inspection pattern is made of the same material with the semiconductor substrate.
16. A method as defined by claim 1 , wherein the misalignment inspection pattern is formed on a scribe line region within the semiconductor substrate.