IP Library Granted Patent US 7,486,116
Granted Patent B2
US 7,486,116 · App. 10/924,207 · Granted Feb 3, 2009

Driver device, in particular for a semiconductor device, and method for operating a driver device

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Quick Facts
Patent No.
US 7,486,116
App. No.
10/924,207
Granted
Feb 3, 2009
Kind
B2
Abstract

The invention relates to a driver device and a method for operating a driver device in particular for a semiconductor device. The driver device includes a signal driver connected to a supply voltage. The driver device also includes a signal driver activating circuit section for activating a further signal driver when the supply voltage lies below a predetermined threshold value.

Claims (18)

1. A semiconductor device, comprising:

a driver device having a first signal driver connected to a semiconductor device supply voltage and a second signal driver, the first and second signal drivers each comprising a pull-up transistor and a pull-down transistor, the first and second signal drivers adapted to jointly drive an output digital signal stream of data on a line connected to the first and second signal drivers;

a signal driver control circuit section, said control circuit section enabling the second signal driver during an initializing phase of the semiconductor device when a voltage representation of the supply voltage is below a predetermined reference value, and disabling the second signal driver during the initializing phase of the semiconductor device when said representation of the supply voltage is above the predetermined reference value;

wherein when the second signal driver is enabled, both the first and second signal drivers continuously and jointly drive the output signal, and when the second signal driver is disabled only the first signal driver drives the output signal; and

wherein when the second signal driver is set to one of said enabled or disabled condition in the initializing phase, the second signal driver is maintained in said set enabled or disabled condition during a subsequent regular operational phase of the semiconductor device regardless of the value of the supply voltage.

2. The driver device according to claim 1 , wherein said driver device further comprises a voltage measuring circuit section for determining whether the supply voltage lies below the predetermined threshold value.

3. The driver device according to claim 1 , wherein the supply voltage lies in a first predetermined range or in a second predetermined range.

4. The driver device according to claim 3 , wherein the first predetermined range and the second predetermined range do not overlap.

5. The driver device according to claim 3 , wherein the predetermined threshold value lies between the first predetermined range and the second predetermined range.

6. A method for operating a semiconductor device, comprising:

connecting a first signal driver and a second signal driver to a semiconductor device supply voltage, the first and second signal drivers each comprising a pull-up transistor and a pull-down transistor, the first and second signal drivers adapted to jointly drive an output digital signal stream of data on a line connected to the first and second signal drivers;

setting the second signal driver during an initializing phase of the semiconductor device to an enabled condition when a voltage representative of the supply voltage has a value that is below a predetermined reference value;

setting the second signal driver during the initializing phase of the semiconductor device to a disabled condition when said voltage representative of the supply voltage has a value that is above the predetermined reference value;

wherein when the second signal driver is enabled, both the first and second signal drivers continuously and jointly drive the output signal, and when the second driver is disabled only the first signal driver drives the output signal; and

wherein when the second signal driver is set to one of said enabled or disabled condition in the initializing phase, the second signal driver is maintained in said set enabled or disabled condition in a subsequent regular operational phase of the semiconductor device regardless of the value of the supply voltage.

7. The method as in claim 6 , wherein the supply voltage lies in a first predetermined range or in a second predetermined range.

8. The method as in claim 7 , wherein the first predetermined range and the second predetermined range do not overlap.

9. The method as in claim 8 , wherein the predetermined threshold value lies between the first predetermined range and the second predetermined range.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 16, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036877/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 15, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023821/0535 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2004
From: EGERER, JENS; BORST, THOMAS
To: INFINEON TECHNOLOGIES AG
Reel/Frame 019376/0121 →