Method for manufacturing semiconductor integrated circuit device
View Patent ↗It is desirable to prevent breakage and separation of wiring of a semiconductor integrated circuit device, such as a bit-line of a DRAM. To accomplish this, disclosed is a method in which, e.g., a high density plasma silicon oxide film is deposited on wirings (e.g., a bit-line that is connected to the source and drain region of a memory cell selection MISFET of a DRAM memory cell) by means of a high density plasma CVD technique, at a first temperature, and the structure is subjected to RTA (heat treatment) at a second temperature higher than the first temperature (e.g., 750° C.). Via holes are then formed in the high density plasma silicon oxide film, and first and second conductive films are then formed, the first conductive film being formed in the via holes and at a third temperature lower than the first temperature. The first and second conductive layers are then polished to remain selectively within the via holes. In heat treating the high density plasma silicon oxide film, the temperature is raised from the first temperature to the second temperature at a maximum speed of 60° C./second or less.
1. A method for manufacturing a semiconductor integrated circuit device comprising the steps of:
(a) forming a first insulating film over a semiconductor substrate;
(b) forming a plurality of wirings on the first insulating film;
(c) forming a second insulating film at a first temperature, so as to cover the wirings;
(d) heat-treating the second insulating film at a second temperature;
(e) etching the second insulating film so that a surface of a wiring, of the plurality of wirings, is exposed to form an aperture in the second insulating film;
(f) forming a first conductive layer inside the aperture at a third temperature by means of chemical vapor deposition technique;
(g) forming a second conductive layer on the first conductive layer; and
(h) polishing the first and second conductive layers so that the first and second conductive layers remain selectively inside the aperture,
wherein the second temperature is higher than the first temperature and the third temperature, and
wherein in the step (d), a speed of increase in temperature from the first temperature to the second temperature is 60° C./second or less.
2. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the wiring is a tungsten film.
3. The method for manufacturing a semiconductor integrated circuit device according to claim 2 , wherein the first conductive layer is a titanium nitride layer.
4. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the second insulating film is formed by means of a chemical vapor deposition technique in which high density plasma is used.
5. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , further comprising a step for forming a third conductive layer on the second insulating film and the second conductive layer.
6. The method for manufacturing a semiconductor integrated circuit device according to claim 5 , wherein the third conductive layer comprises an aluminum layer.
7. The method for manufacturing a semiconductor integrated circuit device according to claim 5 , wherein the third conductive layer comprises a copper layer.
8. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein said speed of increase in temperature from the first temperature to the second temperature is less than 60° C./second.