Method of fabricating flash memory

1. A method of fabricating a flash memory comprising:

forming a first floating gate;

extending the first floating gate by forming a step-shaped second floating gate adjacent a first sidewall of the first floating gate, the step-shaped second floating gate including a first part extending upward above the first floating gate and a second part extending sideward from the first part, wherein forming the step-shaped second floating gate adjacent the first sidewall of the first floating gate comprises:

depositing a polysilicon layer over the first floating gate;

forming spacers on side-wall portions of the polysilicon layer, wherein the spacers are in contact with the side-wall portions and an upper surface of the polysilicon layer below the spacers; and

etching the polysilicon layer using the spacers as a mask to form the step-shaped second floating gate;

depositing a dielectric layer on the first floating gate and the step-shaped second floating gate, wherein the dielectric layer is in contact with both the first floating gate and the step-shaped second floating gate; and

forming a control gate on the dielectric layer.

2. A method as defined in claim 1 wherein the step-shaped second floating gate does not extend over the first floating gate.

3. A method as defined in claim 1 wherein the step-shaped second floating gate is located above a first STI area adjacent the first floating gate.

4. A method as defined in claim 3 , wherein the second part of the step-shaped second floating gate is in contact with the first STI area.