Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments
There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
1 - 10 . (canceled)
11 . A method for obtaining measurements in a plasma processing system comprising the steps of:
a) disposing a measurement probe into a plasma processing system, the measurement probe comprising a substrate and at least one electrically floating sensor disposed on the substrate;
b) obtaining measurements of a plasma property in the plasma processing system using the measurement probe;
c) processing and storing measurement data on the measurement probe; and
d) wirelessly measurement data from the substrate outside the plasma processing system.
12 . The method of claim 11 further comprising the step of utilizing the plasma to power a self contained power source integrated into the substrate.
13 . The method of claim 11 wherein the measurements are non-invasive to the plasma process.
14 . The method of claim 11 wherein the measurement data are wirelessly transmitted in real time from the substrate outside the plasma processing system.
15 . The method of claim 11 wherein the electrically floating sensor comprises a dual floating Langmuir probe.
16 . The method of claim 11 wherein the electrically floating sensor comprises a topographically dependent charging device.
17 . The method of claim 11 wherein the electrically floating sensor comprises a photodiode.
18 . The method of claim 11 wherein the substrate is a silicon wafer.
19 . The method of claim 11 , further comprising the step of monitoring process conditions in the plasma processing system using the measurement data.
20 . The method of claim 11 , further comprising the step of using the measurement data to determine rates of surface modification occurring in a plasma process.
21 . The method of claim 11 , further comprising the step of using the measurement data to determine the quality of surface modification occurring in a plasma process.
22 . The method of claim 11 , further comprising the step of using the measurement data to determine an effect on process results due to variations in at least one of:
a) gas pressure within the plasma processing system;
b) plasma chemistry within the plasma processing system;
c) power density within the plasma processing system;
d) chamber surface conditions within the plasma processing system; and
e) RF bias levels within the plasma processing system.