Alignment mark for coarse alignment and fine alignment of a semiconductor wafer in an exposure tool

1. An alignment mark for the coarse alignment and fine alignment of a semiconductor wafer in an exposure tool, comprising:

a first partial structure for generating a first reflection pattern in the exposure tool for the fine alignment of the semiconductor wafer, the first partial structure comprising a plurality of first structure elements arranged in a plurality of groups, within each group, the first structure elements being arranged relatively parallel and in a manner lying next to one another with a predetermined distance between midpoints, the plurality of groups being arranged symmetrically around the center of an inner region; and

a second partial structure for generating a second reflection pattern in the exposure tool for the coarse alignment of the semiconductor wafer, the second partial structure comprising a plurality of second structure elements, the second structure elements of the second partial structure being formed in a manner corresponding to a pattern stored in the exposure tool and being arranged in the inner region, wherein the second structure elements of the second partial structure further comprise two lines that intersect each other to form a structure of a cross that has a midpoint lying in the center of the inner region.

2. The alignment mark as claimed in claim 1 , wherein the first structure elements of the first partial structure are formed as lines or structured patterns.

3. The alignment mark as claimed in claim 2 , wherein the first partial structure comprises four groups, within each group, the first structure elements of the first partial structure being formed in lines, the lines being spaced apart relatively equidistantly, the four groups being arranged relatively mirror-symmetrically around the center of the inner region in the horizontal and vertical direction.

4. The alignment mark as claimed in claim 3 , wherein the first partial structure comprises a total of eight lines.

5. The alignment mark as claimed in claim 2 , wherein the first partial structure occupies an area having outer sides with a length of approximately 80 μm.

6. The alignment mark as claimed in claim 2 , wherein the first partial structure occupies an area having outer sides with a length of approximately 60 μm.

7. A method of making an alignment mark for the coarse alignment and fine alignment of a semiconductor wafer in an exposure tool, the method comprising:

providing a first partial structure for generating a first reflection pattern in the exposure tool for the fine alignment of the semiconductor wafer, the first partial structure comprising a plurality of first structure elements arranged in a plurality of groups, within each group, the first structure elements being arranged relatively parallel and in a manner lying next to one another with a predetermined distance between midpoints, the plurality of groups being arranged relatively symmetrically around the center of an inner region; and

providing a second partial structure for generating a second reflection pattern in the exposure tool for the coarse alignment of the semiconductor wafer, the second partial structure comprising a plurality of second structure elements, the second structure elements of the second partial structure being formed in a manner corresponding to a pattern stored in the exposure tool and being arranged in the inner region, wherein the second structure elements of the second partial structure further comprise two lines that intersect each other to form a structure of a cross that has a midpoint lying in the center of the inner region.

8. The method as claimed in claim 7 , wherein the first structure elements of the first partial structure are formed as lines or structured patterns.

9. The method as claimed in claim 8 , wherein the first partial structure comprises four groups, within each group, the first structure elements of the first partial structure being formed in lines spaced apart relatively equidistantly, the four groups being arranged relatively mirror-symmetrically around the center of the inner region in the horizontal and vertical direction.

10. The method as claimed in claim 9 , wherein the first partial structure comprises a total of eight lines.

11. The method as claimed in claim 8 , wherein the first partial structure occupies an area having outer sides with a length of approximately 80 μm.

12. The method as claimed in claim 8 , wherein the first partial structure occupies an area having outer sides with a length of approximately 60 μm.