Resistive memory element
View Patent ↗An electrically operated, resistive memory element includes a volume of resistive memory material, adapted to be switched between different detectable resistive states in response to selected enery pulses; means for delivering electrical signals to at least a portion of the volume of resistive memory material; and a volume of heating material for Ohmic heating of the resistive memory material in response to the electrical signals. The volume of heating material is embedded in the volume of resistive memory material.
1. An electrically operated, resistive memory element, comprising:
a volume of resistive memory material, the volume of resistive memory material adapted to be switched between different detectable resistive states in response to selected enery pulses;
means for delivering electrical signals to at least a portion of the volume of resistive memory material; and
a volume of heating material for Ohmic heating of the resistive memory material in response to the electrical signals, the volume of heating material being embedded in the volume of resistive memory material.
2. The resistive memory element of claim 1 , wherein the heating material has an electric resistivity which is higher than an electric resistivity of the resistive memory material in its lowest resistive state.
3. The resistive memory element of claim 1 , wherein the means for delivering electrical signals comprisies a first electrical contact and a second electrical contact adjoining the resistive memory material.
4. The resistive memory element of claim 3 , wherein one of the first and second electrical contacts comprises a heater electrode.
5. The resistive memory element of claim 3 , wherein one of the first and second electrical contacts comprises a plug electrode adapted to be connected to a transistor device.
6. The resistive memory element of claim 5 , further comprising:
a via opening, the via opening being diposed between the plug and the other one of the first and second electrical contacts, the via opening being at least partly filled with the resistive memory material contacting the plug.
7. The resistive memory element of claim 1 , wherein the volume of heating material forms at least one heating material layer.
8. The resistive memory element of claim 4 , wherein a distance between the heating material layer and the heater electrode is greater than a distance between the heating material layer and the other one of the first and second electrical contacts.
9. The resistive memory element of claim 6 , wherein a distance between the heating material layer and the top electrode is greater than a distance between the heating material layer and the plug.
10. The resistive memory element of claim 4 , further comprising a layer made of the resistive memory material sandwiched between the heater electrode and the volume of resistive memory material.
11. The resistive memory element of claim 7 , wherein the resistive memory material layer has a thickness in the range of 2 to 70 nanometers.
12. The resistive memory element of claim 7 , wherein the resistive memory material layer has a thickness in the range of 5 to 20 nanometers.
13. The resistive memory element of claim 1 , wherein the heating material is selected to have a thermal conductivity being greater than that one of the resistive memory material.
14. The resistive memory element of claim 1 , wherein the resistive memory material is a phase change material.
15. The resistive memory element of claim 14 , wherein the phase change material includes at least one chalcogen element.
16. The resistive memory element of claim 15 , wherein the phase change material is Ge 2 Sb 2 Te 5 .
17. The resistive memory element of claim 1 , wherein the heating material is selected from the group comprising TiO x N y , TiSi x N y , TiAl x N y , TaAl x N y , TaSi x N y , TaO x N y , where x and y are positive numbers, and C.
18. The resistive memory element of claim 1 , wherein the resistive memory element is realized in 5 to 8 F 2 size.
19. The resistive memory element of claim 7 , wherein a distance between the heating material layer and the heater electrode is greater than a distance between the heating material layer and the other one of the first and second electrical contacts.
20. The resistive memory element of claim 7 , wherein a distance between the heating material layer and the top electrode is greater than a distance between the heating material layer and the plug.
21. The resistive memory element of claim 7 , further comprising a layer made of the resistive memory material sandwiched between the heater electrode and the volume of resistive memory material.