IP Library Granted Patent US 7,227,366
Granted Patent B2
US 7,227,366 · App. 10/955,219 · Granted Jun 5, 2007

Device and a method for biasing a transistor that is connected to a power converter

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Quick Facts
Patent No.
US 7,227,366
App. No.
10/955,219
Granted
Jun 5, 2007
Kind
B2
Abstract

Biasing a transistor connected to a voltage converter, the method includes: (i) providing at least one bias voltage to at least one well of at least one transistor of a test circuitry; (ii) measuring at least one parameter of a test circuitry representative of at least one characteristic of the transistor and of at least one characteristic of the voltage converter; (iii) altering at least one bias voltage and repeating the stages of providing and measuring until a predefined control criteria is fulfilled; and (iv) providing a voltage bias to a well of the transistor in response to the measurements.

Claims (31)

1. A method for biasing a transistor coupled to a voltage converter, the method comprising:

providing at least one bias voltage to at least one well of at least one transistor of a test circuitry;

measuring at least one parameter of a test circuitry representative of at least one characteristic of the transistor and of at least one characteristic of the voltage converter;

altering at least one bias voltage and repeating the stages of providing and measuring until a predefined control criteria is fulfilled; and

and providing a voltage bias to a well of the transistor in response to the measurements;

wherein the at least one characteristic of the transistor is at least two leakage currents;

wherein a first leakage current is responsive to a characteristic of the voltage converter and wherein a second leakage current is substantially indifferent to the characteristic of the voltage converter.

2. The method of claim 1 wherein the at least one parameter is a leakage current.

3. The method of claim 1 whereas the control criterion is responsive to a leakage current level.

4. The method of claim 1 whereas one of the transistor characteristics is responsive to the at least one characteristic of the voltage supply.

5. The method of claim 1 further comprising a stage of providing a test circuitry that comprises at least one test circuit of a first type and at least one test circuit of a second type; whereas a parameter of the test circuit of the first type is representative of first leakage current and wherein a parameter of the test circuit of the second type is representative of the second leakage current.

6. The method of claim 5 wherein a relationship between an amount of test circuit of the first type and an amount of a test circuit of the second type is responsive to the at least one characteristic of the voltage converter.

7. The method of claim 6 wherein a characteristic of the voltage converter is a ratio between an input current of the voltage converter and an output current of the voltage converter.

8. The method of claim 1 further comprising selectively disconnecting the voltage converter from the transistor in response to an operational mode of the transistor.

9. The method of claim 8 wherein operational mode is characterized by an operating frequency of the transistor.

10. A device comprising:

at least one transistor;

at least one voltage converter, coupled to the at least one well of at least one transistor, for providing at least one bias voltage;

a test circuitry, coupled to the at least one voltage converter, adapted to:

(i)measure at least one parameter of the test circuitry representative of at least one characteristic of the transistor and of at least one characteristic of the voltage converter;

(ii) alter at least one bias voltage provided to the test circuitry and measure at least one parameter, until a control criterion is fulfilled; and

(iii) determine, in response to the at least one measured parameter, at least bias voltage to be provided to at least one well of the at least one transistor;

wherein the at least one characteristic of the transistor is at least two leakage currents;

wherein a first leakage current is responsive to a characteristic of the voltage converter and wherein a second leakage current is substantially indifferent to the characteristic of the voltage converter.

11. The device of claim 10 wherein a measured parameter is a leakage current.

12. The device of claim 10 whereas one of the transistor characteristics is responsive to the at least one characteristic of the voltage supply.

13. The device of claim 10 wherein the test circuitry comprises at least one test circuit of a first type and at least one test circuit of a second type; whereas a parameter of the test circuit of the first type is representative of first leakage current and wherein a parameter of the test circuit of the second type is representative of the second leakage current.

14. The device of claim 13 wherein a relationship between an amount of test circuit of the first type and an amount of a test circuit of the second type is responsive to the at least one characteristic of the voltage converter.

15. The device of claim 10 wherein a characteristic of the voltage converter is a ratio between an input current of the voltage converter and an output current of the voltage converter.

16. The device of claim 10 further adapted to selectively disconnect the voltage converter from the transistor in response to an operational mode of the transistor.

17. The device of claim 16 wherein the operational mode is characterized by an operating frequency of the transistor.

Assignments (24)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
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To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
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RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
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CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2018
From: NXP USA, INC.
To: VLSI TECHNOLOGY LLC
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
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From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
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CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
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RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
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To: NXP B.V.
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RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
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To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
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PATENT RELEASE Recorded Dec 21, 2015
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To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
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PATENT RELEASE Recorded Dec 21, 2015
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