IP Library Granted Patent US 8,002,962
Granted Patent B2
US 8,002,962 · App. 10/963,369 · Granted Aug 23, 2011

Copper electrodeposition in microelectronics

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,002,962
App. No.
10/963,369
Granted
Aug 23, 2011
Kind
B2
Abstract

A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Claims (17)

1. A method for electroplating Cu onto a substrate having electrical interconnect features in the manufacture of a microelectronic device, the method comprising:

immersing the substrate in an electrolytic solution comprising the following:

a source of Cu ions in an amount sufficient to electrodeposit Cu onto the substrate and into the electrical interconnect features wherein the electrical interconnect features comprise openings of less than about 100 nm and the electrical interconnect features have an aspect ratio (depth:width) of greater than about 4:1;

one or more superfilling agent compounds which promote a Cu deposit in the interconnect features characterized by a rate of growth in the vertical direction which is substantially greater than a rate of growth in the horizontal direction, wherein the superfilling agent compounds are selected from the group consisting of an accelerator, a suppressor, and combinations thereof; and

a leveling agent comprising a substituted pyridyl polymer compound which has a leveling effect without substantially interfering with superfilling, wherein the substituted pyridyl polymer compound is a reaction product obtained by causing (i) a pyridine starting material selected from the group consisting of 4-vinyl pyridine and poly(4-vinylpyridine) to react with (ii) a reagent selected from the group consisting of dimethyl sulfate and methyl tosylate; and

supplying electrical current to the electrolytic solution to deposit Cu onto the substrate.

2. The method of claim 1 wherein the substrate is a semiconductor integrated circuit device substrate with said electrical interconnect features.

3. The method of claim 1 wherein the substituted pyridyl polymer compound is a reaction product of 4-vinyl pyridine and dimethyl sulfate.

4. The method of claim 1 wherein the substituted pyridyl polymer compound has a molecular weight between about 10,000 and 20,000 g/mol.

5. The method of claim 1 wherein the substituted pyridyl polymer compound has a molecular weight between about 60,000 and 160,000 g/mol.

6. The method of claim 1 wherein the electrolytic solution consists essentially of:

the source of Cu ions in an amount sufficient to electrodeposit Cu onto the substrate and into the electrical interconnect features wherein the electrical interconnect features comprise openings of less than about 100 nm and the electrical interconnect features have an aspect ratio (depth:width) of greater than about 4:1;

the one or more superfilling agent compounds which promote a Cu deposit in the interconnect features characterized by a rate of growth in the vertical direction which is substantially greater than a rate of growth in the horizontal direction, wherein the superfilling agent compounds are selected from the group consisting of an accelerator, a suppressor, and combinations thereof; and

the leveling agent comprising a substituted pyridyl polymer compound which has a leveling effect without substantially interfering with superfilling, wherein the substituted pyridyl polymer compound is a reaction product obtained by causing (i) a pyridine starting material selected from the group consisting of 4-vinyl pyridine and poly(4-vinylpyridine) to react with (ii) a reagent selected from the group consisting of dimethyl sulfate and methyl tosylate.

7. The method of claim 1 wherein the leveling agent consists of the substituted pyridyl polymer compound which has a leveling effect without substantially interfering with superfilling, wherein the substituted pyridyl polymer compound is a reaction product obtained by causing (i) a pyridine starting material selected from the group consisting of 4-vinyl pyridine and poly(4-vinylpyridine) to react with (ii) a reagent selected from the group consisting of dimethyl sulfate and methyl tosylate.

8. The method of claim 1 wherein the substituted pyridyl polymer compound is a reaction product of poly(4-vinylpyridine) and methyl tosylate.

9. The method of claim 1 wherein the substituted pyridyl polymer compound is a reaction product of 4-vinyl pyridine and methyl tosylate.

Assignments (5)
ASSIGNMENT OF SECURITY INTEREST IN PATENT COLLATERAL Recorded Nov 17, 2022
From: BARCLAYS BANK PLC
To: CITIBANK, N.A.
Reel/Frame 061956/0643 →
CHANGE OF NAME Recorded Feb 15, 2019
From: ENTHONE INC.
To: MACDERMID ENTHONE INC.
Reel/Frame 048355/0656 →
SECURITY INTEREST Recorded Feb 5, 2019
From: MACDERMID ENTHONE INC. (F/K/A ENTHONE INC.)
To: BARCLAYS BANK PLC, AS COLLATERAL AGENT
Reel/Frame 048261/0110 →
RELEASE OF SECURITY INTEREST Recorded Feb 4, 2019
From: BARCLAYS BANK PLC, AS COLLATERAL AGENT
To: MACDERMID ENTHONE INC. (F/K/A ENTHONE INC.)
Reel/Frame 048233/0141 →
PATENT SECURITY AGREEMENT Recorded Apr 15, 2016
From: ENTHONE INC.
To: BARCLAYS BANK PLC, AS COLLATERAL AGENT
Reel/Frame 038439/0777 →