Semiconductor diode and method therefor
View Patent ↗In one embodiment, a diode is formed with anodes on two surfaces of a semiconductor substrate.
1. A method of forming a diode comprising:
providing a substrate having a first surface and a second surface that is on an opposite side of the substrate from the first surface;
forming a first anode of the diode on the first surface of the substrate; and
forming a second anode of the diode on the second surface of the substrate.
2. The method of claim 1 further including forming a first cathode of the diode on the first surface of the substrate.
3. The method of claim 2 wherein forming the first cathode of the diode on the first surface includes forming a first doped region on the first surface surrounding the first cathode and forming a second doped region on the first surface surrounding the first anode.
4. The method of claim 3 further including forming a third doped region on the second surface and surrounding the second anode.
5. The method of claim 3 wherein forming the third doped region includes forming the first doped region, the second doped region, and the third doped region of a second conductivity type.
6. The method of claim 2 further including forming a second cathode on the second surface of the substrate.
7. The method of claim 1 wherein providing the substrate having the first surface and the second surface includes providing a bulk semiconductor substrate of a first conductivity type having a first surface and a second surface, forming a first epitaxial layer of the first conductivity type on the first surface, and forming a second epitaxial layer of the first conductivity type on the second surface.
8. The method of claim 1 wherein forming the first anode of the diode on the first surface of the substrate includes forming the first anode on a first portion of the first surface and forming a cathode on a second portion of the first surface on the substrate.
9. The method of claim 1 wherein forming the first anode of the diode on the first surface of the substrate includes forming a silicide on a first portion of the first surface and further including forming an opening in a second portion of the first surface and electrically contacting a cathode of the diode through the opening.
10. The method of claim 1 wherein forming the first anode of the diode on the first surface of the substrate includes forming an epitaxial layer on a surface of a bulk semiconductor substrate, forming a silicide on a first portion of a surface of the epitaxial layer, and further including forming an opening through a second portion of the surface of the epitaxial layer and exposing a portion of the bulk semiconductor substrate, and forming a cathode of the diode on the bulk semiconductor substrate.
11. A diode comprising:
a substrate having a first surface and a second surface that is on an opposite side of the substrate from the first surface;
a first anode on the first surface; and
a second anode on the second surface.
12. The diode of claim 11 wherein the substrate having the first surface and the second surface includes a bulk semiconductor substrate having a first epitaxial layer on one surface of the bulk semiconductor substrate and a second epitaxial layer on a second surface wherein a surface of the first epitaxial layer forms the first surface of the substrate and a surface of the second epitaxial layer forms the second surface of the substrate.
13. The diode of claim 12 further including an opening through a portion of the first epitaxial layer and an electrical contact to the bulk semiconductor substrate within the opening.
14. The diode of claim 11 further including a first doped region surrounding one side of the first anode and a second doped region surrounding a second side of the first doped region.
15. The diode of claim 14 further including the first doped region surrounding a cathode of the diode.
16. The diode of claim 11 further including a first cathode on the first surface.
17. The diode of claim 16 further including a second cathode on the second surface.
18. The diode of claim 16 wherein the first cathode includes an opening in the first surface with an electrical contact to the substrate within the opening.
19. The diode of claim 11 wherein the first anode and the second anode are metal-silicides.
20. The diode of claim 11 wherein the first anode and the second anode are doped regions.