Method for fabricating a semiconductor structure with an encapsulation of a filling which is used for filling trenches
View Patent ↗A method for encapsulating a filling in a trench of a semiconductor substrate includes providing a first barrier layer in a trench and a second barrier layer disposed above the first barrier layer. The trench is filled with a filling, which is subsequently etched back in an upper trench section, so that a hole is produced and a filling residue remains in a lower trench section. Subsequently, a non-conformal cover layer is provided in an upper trench section, so that the cover layer of a bottom region has a first thickness greater than a second thickness of a wall region of the cover layer. The cover layer and the second barrier layer are isotropically etched-back and removed from the upper trench section, and the first barrier layer remains. The bottom region remains covered resulting in the filling residue being encapsulated by the first barrier layer and the residual cover layer.
1. A method for fabricating a semiconductor structure, which comprises the steps of:
providing a semiconductor substrate having a trench formed therein;
providing a first barrier layer in the trench of the semiconductor substrate;
providing a second barrier layer above the first barrier layer;
filling the trench with a filling;
etching-back the filling in an upper trench section, resulting in a formation of a hole in the upper trench section and a filling residue remaining in a lower trench section;
providing a non-conformal cover layer in the upper trench section, the cover layer having a bottom region with a first thickness greater than a second thickness of a wall region of the cover layer; and
isotropic etching-back of the cover layer and of the second barrier layer in the upper trench section, so that, in the wall region, the cover layer and also the second barrier layer are removed and the first barrier layer remains and the bottom region remains covered by a residual cover layer, as a result of which the filling residue is encapsulated by the first barrier layer and the residual cover layer in a capsule.
2. The method according to claim 1 , which further comprises forming the cover layer as a silicon nitride liner.
3. The method according to claim 1 , which further comprises forming the cover layer as a high-density silicon nitride liner.
4. The method according to claim 1 , which further comprises depositing the cover layer using a high-density chemical vapor deposition method.
5. The method according to claim 2 , which further comprises depositing the silicon nitride liner using a high-density chemical vapor deposition method.
6. The method according to claim 3 , which further comprises depositing the high-density silicon nitride liner using a high-density chemical vapor deposition method.
7. The method according to claim 1 , which further comprises forming the cover layer with an aspect ratio of at least 5.
8. The method according to claim 2 , which further comprises forming the silicon nitride liner with an aspect ratio of at least 5.
9. The method according to claim 3 , which further comprises forming the high-density silicon nitride liner with an aspect ratio of at least 5.
10. The method according to claim 1 , which further comprises forming the second barrier layer as a silicon nitride liner.
11. The method according to claim 1 , which further comprises forming the filling from borophosphosilicate glass (BPSG).