IP Library Granted Patent US 7,705,432
Granted Patent B2
US 7,705,432 · App. 11/016,558 · Granted Apr 27, 2010

Three dimensional six surface conformal die coating

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Quick Facts
Patent No.
US 7,705,432
App. No.
11/016,558
Granted
Apr 27, 2010
Kind
B2
Abstract

Semiconductor die are typically manufactured as a large group of integrated circuit die imaged through photolithographic means on a semiconductor wafer or slice made of silicon. After manufacture, the silicon wafer is thinned, usually by mechanical means, and the wafer is cut, usually with a diamond saw, to singulate the individual die. The resulting individual integrated circuit has six exposed surfaces. The top surface of the die includes the circuitry images and any passivation layers that have been added to the top layer during wafer fabrication. The present invention describes a method for protecting and insulating all six surfaces of the die to reduce breakage, provide electrical insulation for these layers, and to provide physical surfaces that can be used for bonding one semiconductor die to another for the purpose of stacking die in an interconnected module or component.

Claims (5)

1. Individual freestanding silicon die, including six surfaces, which have been singulated from a semiconductor wafer, the die being coated on all six surfaces with a parylene film which has been applied to all surfaces; the parylene film providing electrical insulation and serving as a mechanical protection for the surfaces to prevent chipping and cracking of the silicon die.

2. The die as in claim 1 including openings in the parylene film where the parylene film has been removed to expose a specific layer or feature underneath the insulating material.

3. The die as in claim 2 wherein the opening is above electrical connection pads above circuitry on a top surface of the die.

4. The die as in claim 2 wherein the opening is above optical emitters or sensors on a top surface of the die.

5. The die as in claim 2 wherein the openings are formed through the use of a laser to remove, or ablate, the polymer material from above a specific layer or feature.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2013
From: VERTICAL CIRCUITS (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
To: INVENSAS CORPORATION
Reel/Frame 029736/0944 →
CHANGE OF NAME Recorded Jan 24, 2013
From: VERTICAL CIRCUITS SOLUTIONS, INC.
To: VERTICAL CIRCUITS, INC.
Reel/Frame 029686/0255 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2013
From: VERTICAL CIRCUITS, INC.
To: VERTICAL CIRCUITS SOLUTIONS, INC.
Reel/Frame 029683/0797 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 24, 2012
From: VERTICAL CIRCUITS, INC.
To: VERTICAL CIRCUITS (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
Reel/Frame 029186/0755 →