Die attach by temperature gradient lead free soft solder metal sheet or film
View Patent ↗A die attach process employs a temperature gradient lead free soft solder metal sheet or thin film as the die attach material. The sheet or thin film is formed to a uniform thickness and has a heat vaporizable polymer adhesive layer on one surface, by which the thin film is laminated onto the back metal of the silicon wafer. The thin film is lead-free and composed of acceptably non-toxic materials. The thin film remains semi-molten (that is, not flowable) in reflow temperatures in the range about 260° C. to 280° C. The polymer adhesive layer is effectively vaporized at the high reflow temperatures during the die mount.
1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor wafer;
providing a temperature gradient lead free soft solder metal film having a film alloy composition, a higher melting temperature near a middle portion of the solder metal film, and a lower melting temperature near first and second surfaces of the solder metal film;
forming a heat vaporizable polymer adhesive layer over the solder metal film;
mounting the semiconductor wafer to the polymer adhesive layer over the solder metal film;
dicing the semiconductor wafer and solder metal film to form a solder metal film laminated semiconductor die;
providing a leadframe having a die paddle;
pre-heating the leadframe to a reflow temperature above the melting temperature of the middle portion of the solder metal film prior to mounting the solder metal film laminated semiconductor die to the die paddle of the leadframe; and
mounting the solder metal film laminated semiconductor die to the die paddle of the pre-heated leadframe in less than 50 milliseconds to avoid melting of the polymer adhesive layer before making contact between the solder metal film laminated semiconductor die and the die paddle of the pre-heated leadframe, wherein the reflow temperature of the leadframe raises the middle portion and first and second surfaces of the solder metal film above the respective melting temperatures and the polymer adhesive layer is completely vaporized at the reflow temperature after mounting the solder metal film laminated semiconductor die to the die paddle of the leadframe.
2. The method of claim 1 , wherein the polymer adhesive layer includes polycarbonated distillates or hydrocarbon condensed polyimides that evaporate at temperatures exceeding 180 degrees C.
3. The method of claim 1 , further including mounting the heat vaporizable polymer adhesive layer of the solder metal film to a backmetal surface of the semiconductor wafer.
4. The method of claim 1 , wherein the melting temperature of the middle portion of the solder metal film is 250 degrees C.
5. The method of claim 1 , wherein the reflow temperature ranges from 260 to 280 degrees C.
6. The method of claim 1 , wherein the melting temperate of the first surface of the solder metal film is 180 degrees C. and the melting temperate of the second surface of the solder metal film is 210 degrees C.
7. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor wafer;
providing a solder metal film;
forming a heat vaporizable polymer adhesive layer over the solder metal film;
mounting the semiconductor wafer to the polymer adhesive layer over the solder metal film;
dicing the semiconductor wafer and solder metal film to form a film laminated semiconductor die;
providing a leadframe having a die paddle;
pre-heating the leadframe to a reflow temperature above a melting temperature of the solder metal film; and
mounting the film laminated semiconductor die to the die paddle of the leadframe, wherein the reflow temperature of the leadframe raises the solder metal film above its melting temperature and the polymer adhesive layer is completely vaporized at the reflow temperature after mounting the solder metal film laminated semiconductor die to the die paddle of the leadframe.
8. The method of claim 7 , wherein the solder metal film has a film alloy composition, a higher melting temperature near a middle portion of the solder metal film, and a lower melting temperature near a first and second surface of the solder metal film.
9. The method of claim 8 , wherein the melting temperate of the middle portion of the solder metal film is 250 degrees C.
10. The method of claim 8 , wherein the melting temperate of the first surface of the solder metal film is 180 degrees C. and the melting temperate of the second surface of the solder metal film is 210 degrees C.
11. The method of claim 7 , wherein the reflow temperature ranges from 260 to 280 degrees C.