Metallic nanowire and method of making the same
View Patent ↗A metallic nanowire having an aspect ratio of at least 100 and a diameter less than 200 nanometers composed of at least one of bismuth, indium, tin, lead, zinc, antimony and alloys of the same and a method of making the same from a thin film composite.
1. A metallic nanowire composed of at least one of bismuth, indium, tin, lead, zinc, antimony, alloys containing bismuth, alloys containing indium, alloys containing tin, alloys containing lead, alloys containing zinc and alloys containing antimony, the metallic material present in at least one single elongated crystal having an aspect ratio of greater than or equal to 100,000.
2. The metallic nanowire of claim 1 wherein the material of composition is at least one of bismuth, indium, tin, lead, zinc and antimony.
3. The metallic nanowire of claim 1 wherein the single crystalline region is at least 50 microns.
4. The metallic nanowire of claim 1 wherein the nanowire has a diameter less than about 200 nanometers.
5. The metallic nanowire of claim 1 wherein the diameter is greater than 20 nanometers.
6. The metallic nanowire of claim 1 wherein the nanowire includes at least one extrusion mark.
7. Metallic nanowires formed by a method comprising:
forming a composite film, such that the composite film of at least two phases has at least one outwardly oriented surface, wherein a first phase is a metallic material, the metallic material including at least one of bismuth, indium, tin, lead, zinc, antimony, alloys containing bismuth, alloys containing indium, alloys containing tin, alloys containing lead, alloys containing zinc and alloys containing antimony, and a second phase functions as a host matrix, the composite film emitting nanowires from the at least one outwardly oriented surface, the nanowires composed of the metallic material of the first phase and having an elongated crystalline structure, a diameter less than about 500 nanometers and an aspect ratio of greater than or equal to 100,000.
8. Metallic nanowires formed by a method comprising:
forming a composite film having at least two phases, wherein at least one phase contains a metallic compound, and at least one host matrix phase contains at least one of nitrides, carbon, oxides, borides, and mixtures thereof, the composite film having an initial high elevated compressive stress, at least one initiation point, and at least one outwardly oriented surface;
establishing a layer on at least a portion of the at least one outwardly oriented surface, the layer composed of at least one material which is essentially non-interactive with materials contained in the composite film, the layer being at least partially removable relative to the outwardly oriented surface of the composite film; and
at least partially removing the layer from the outwardly oriented surface, thereby initiating extrusion of the metallic nanowires from the outwardly oriented surface;
wherein each of the metallic nanowires is composed of the metallic compound of the first phase and has an elongated crystalline structure, a diameter less than about 500 nanometers and an aspect ratio of greater than or equal to 100,000.