Integration of an electrical diode within a fuel cell
View Patent ↗A fuel cell system that employs a diode electrically coupled between bipolar plates in a fuel cell of a fuel cell stack for preventing the fuel cell between the plates from reversing its polarity. The diode is a thin-sheet p-n diode including doped semiconductor layers and has a thickness relative to the thickness of the MEA in the fuel cell so that the overall stack thickness does not increase. When the fuel cell is operating properly the diode does not conduct and all of the current through the fuel cell goes through the MEA. If the electric load on the stack increases to a level beyond the capability of the fuel cell, where the potential across the fuel cell goes significantly below zero, the diode will begin to conduct so that any current that cannot travel through the MEA with the cell voltage less than one negative forward diode voltage drop is able to go around the MEA through the diode.
1. A fuel cell comprising:
a first bipolar plate;
a second bipolar plate;
an MEA positioned between the first and second bipolar plates; and
a thin-sheet diode positioned adjacent to the MEA and being electrically coupled to the first and second bipolar plates, wherein the diode is non-conductive when a potential between the first bipolar plate and the second bipolar plate is within a predetermined voltage range, and wherein the diode becomes conductive when the potential between the first and second bipolar plates is slightly negative so that the potential between the first and second bipolar plates does not go significantly below zero.
2. The fuel cell according to claim 1 wherein the thin-sheet diode is a PN diode.
3. The fuel cell according to claim 1 wherein the thin-sheet diode includes doped semiconductor layers.
4. The fuel cell according to claim 3 wherein the thin-sheet diode includes semiconductor layers selected from the group consisting of InAs and GaInAs.
5. The fuel cell according to claim 3 wherein the thin-sheet diode includes a semiconductor substrate layer, a buffer layer deposited on the substrate layer, a tunnel junction deposited on the buffer layer, p-n diode layers deposited on the tunnel junction and an N-contact layer deposited on the p-n diode layers.
6. The fuel cell according to claim 5 wherein the substrate layer is an n-type InAs wafer, the buffer layer is a 2000 Å n-type InAs layer, the tunnel junction includes an N+ 1000 Å InAs layer doped with silicon at −1.0×10 19 and a P+ 1000 Å InAs layer doped with beryllium at 1.0×10 19 , the p-n diode layers include a 1000 Å InAs P layer doped with beryllium at 1.0×10 18 and a 2000 Å InAs undoped N layer 60 , and the N-contact layer is a 2000 Å InAs N layer doped with silicon at −1.0×10 19 .
7. The fuel cell according to claim 1 wherein the thin-sheet diode has a thickness in the range of 50 microns to 1.3 mm and an area in the range of 0.2-5.0 cm 2 .
8. The fuel cell according to claim 1 wherein the diode is non-conductive between a potential of about zero and about +1 volts between the first and second bipolar plates.
9. The fuel cell according to claim 1 wherein the fuel cell is part of a fuel cell stack.
10. The fuel cell according to claim 9 wherein the fuel cell stack is on a vehicle.
11. A fuel cell comprising:
a first bipolar plate;
a second bipolar plate;
an MEA positioned between the first and second bipolar plates; and
a thin-sheet p-n diode positioned adjacent to the MEA and being electrically coupled to the first and second bipolar plates, said p-n diode including doped InAs semiconductor layers, wherein the diode is non-conductive when a potential between the first bipolar plate and the second bipolar plate is within a predetermined voltage range, and wherein the diode becomes conductive when the potential between the first and second bipolar plates is near −0.1V so that the potential between the first and second bipolar plates does not go significantly below zero.
12. The fuel cell according to claim 11 wherein the thin-sheet p-n diode includes a semiconductor substrate layer, a buffer layer deposited on the substrate layer, a tunnel junction deposited on the buffer layer, p-n diode layers deposited on the tunnel junction and an N-contact layer deposited on the p-n diode layers.
13. The fuel cell according to claim 12 wherein the substrate layer is an n-type InAs layer, the buffer layer is a 2000 Å n-type InAs layer, the tunnel junction includes an N+ 1000 Å InAs layer doped with silicon at −1.0×10 19 and a P+ 1000 Å InAs layer doped with beryllium at 1.0×10 19 , the p-n diode layers include a 1000 Å InAs P layer doped with beryllium at 1.0×10 18 and a 2000 Å InAs undoped N layer 60 , and the N-contact layer is a 2000 Å InAs N layer doped with silicon at −1.0×10 19 .
14. The fuel cell according to claim 11 wherein the thin-sheet diode has a thickness in the range of 50 microns to 1.3 mm and an area in the range of 0.2-5.0 cm 2 .
15. The fuel cell according to claim 11 wherein the p-n diode is non-conductive between a potential of about zero and about +1 volts between the first and second bipolar plates.
16. The fuel cell according to claim 11 wherein the fuel cell is part of a fuel cell stack.
17. The fuel cell according to claim 16 wherein the fuel cell stack is on a vehicle.
18. A fuel cell stack for a vehicle, said stack including a plurality of fuel cells, each fuel cell comprising:
a top bipolar plate;
a bottom bipolar plate;
an MEA positioned between the top and bottom bipolar plates so as to define an anode flow channels between the top bipolar plate and the MEA and a cathode flow channels between the bottom bipolar plate and the MEA; and
a thin-sheet p-n diode positioned adjacent to the MEA and being electrically coupled to the first and second bipolar plates, said p-n diode including doped InAs semiconductor layers, wherein the p-n diode is non-conductive between a potential of about zero and about +1 volts across the top and bottom bipolar plates, and wherein the diode becomes conductive when the potential across the top and bottom bipolar plates is slightly negative so that the potential across the top and bottom bipolar plates does not go significantly below zero.
19. The fuel cell according to claim 18 wherein the thin-sheet p-n diode includes a semiconductor substrate layer, a buffer layer deposited on the substrate layer, a tunnel junction deposited on the buffer layer, p-n diode layers deposited on the tunnel junction and an N-contact layer deposited on the p-n diode layers.
20. The fuel cell according to claim 19 wherein the substrate layer is an n-type InAs wafer, the buffer layer is a 2000 Å n-type InAs layer, the tunnel junction includes an N+ 1000 Å InAs layer doped with silicon at −1.0×10 19 and a P+ 1000 Å InAs layer doped with beryllium at 1.0×10 19 , the p-n diode layers include a 1000 Å InAs P layer doped with beryllium at 1.0×10 18 and a 2000 Å InAs undoped N layer 60 , and the N-contact layer is a 2000 Å InAs N layer doped with silicon at −1.0×10 19 .
21. The fuel cell according to claim 18 wherein the thin-sheet diode has a thickness in the range of 50 microns to 1.3 mm and an area in the range of 0.2-5.0 cm 2 .