Semiconductor device

1. A semiconductor device, comprising:

a substrate having a first coefficient of thermal expansion (CTE) for carrying a semiconductor chip on a first surface of said substrate;

said semiconductor chip having a second coefficient of thermal expansion different from said first coefficient of thermal expansion;

means for punctually attaching said semiconductor chip at attachment points thereof to said substrate situated laterally adjacent said semiconductor chip; and

means for compensating a different thermal expansion between said substrate and said semiconductor chip at said attachment points, said compensation means having a third coefficient of thermal expansion different from said first and second coefficient of thermal expansion of said substrate and said semiconductor chip, respectively and said compensating means being attached to said semiconductor chip and to said attachment points in between said semiconductor chip and said attachment points,

wherein a silicone slip agent is arranged in between said substrate and said semiconductor chip and in between said substrate and said compensating means, except at said attachment points.

2. A semiconductor device according to claim 1 ,

wherein said semiconductor chip is punctually attached to said substrate in addition via a single attachment point in or near the center of said semiconductor chip.

3. A semiconductor device according to claim 1 ,

wherein said compensation means has a predetermined lateral extension, said predetermined lateral extension of said compensation means being selected dependant from the lateral extension of said semiconductor chip from its center and the distance from said center to said attachment points as well as dependent from said third coefficient of thermal expansion.

4. A semiconductor device according to claim 3 ,

wherein said predetermined lateral extension of said compensating means is determined by multiplying the lateral extension of said semiconductor chip from its center by the difference of the second coefficient of thermal expansion minus the first coefficient of thermal expansion divided by the differefice of the first coefficient of thermal expansion minus the third coefficient of thermal expansion.

5. A semiconductor device according to claim 1 ,

wherein said attachment points are located on compensating lines, i.e. lines where even without attachment no thermally induced relative motion of the chip and substrate occurs.

6. A semiconductor device according to claim 1 ,

wherein said attachment points are arranged crosswise or diagonally or both with respect to said semiconductor chip.

7. A semiconductor device according to claim 1 ,

wherein said semiconductor chip is located in the center of said substrate.

8. A semiconductor device according to claim 1 ,

wherein said substrate is connected to a carrier, i.e. a circuit board on a second surface of said substrate opposite said first surface via solder, preferably solder bumps, or electrically conductive adhesive.

9. A semiconductor device according to claim 8 ,

wherein said substrate has the same or a comparable coefficient of thermal expansion (CTE) as said carrier.

10. A semiconductor device according to claim 1 ,

wherein said semiconductor chip is electrically, connected to a second surface of said substrate through a window, preferably in a center axis, in said substrate via bond wires.

11. A semiconductor device according to claim 1 ,

wherein said chip is electrically connected to the first surface of said substrate via bond wires lateral of said semiconductor chip.

12. A semiconductor device according to claim 1 ,

wherein said attachment points are formed by an adhesive, which preferably is epoxy-based.

13. A semiconductor device according to claim 1 ,

wherein said compensation means consists of a plastic, preferably a polymer.

14. A semiconductor device according to claim 1 ,

wherein said semiconductor chip and said compensating means is located under a protection means, which preferably has the same or a comparable coefficient of thermal expansion as the substrate.

15. A semiconductor device according to claim 14 ,

wherein said protection means covers said semiconductor chip and said compensating means from all sides except the side facing said first surface of said substrate without touching them.

16. A semiconductor device according to claim 14 ,

wherein said protection means consists of a stainless steel, an alloy, nickel silver or plastics, preferably a polymer.

17. A semiconductor device according to claim 14 ,

wherein said protection means is attached to said semiconductor chip punctually via a single attachment point at or near the center of said semiconductor chip.

18. A semiconductor device according to claim 1 ,

wherein said compensation means forms a frame surrounding said semiconductor chip laterally.